Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

dc.bibliographicCitation.firstPage1177eng
dc.bibliographicCitation.journalTitleBeilstein journal of nanotechnologyeng
dc.bibliographicCitation.lastPage1187eng
dc.bibliographicCitation.volume10eng
dc.contributor.authorvan Treeck, David
dc.contributor.authorLedig, Johannes
dc.contributor.authorScholz, Gregor
dc.contributor.authorLähnemann, Jonas
dc.contributor.authorMusolino, Mattia
dc.contributor.authorTahraoui, Abbes
dc.contributor.authorBrandt, Oliver
dc.contributor.authorWaag, Andreas
dc.contributor.authorRiechert, Henning
dc.contributor.authorGeelhaar, Lutz
dc.date.accessioned2021-10-26T08:31:23Z
dc.date.available2021-10-26T08:31:23Z
dc.date.issued2019
dc.description.abstractWe present the combined analysis of electroluminescence (EL) and current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I-V characteristics are described well by a modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single-NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single-NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows for a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool. © 2019 van Treeck et al.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7104
dc.identifier.urihttps://doi.org/10.34657/6151
dc.language.isoengeng
dc.publisherFrankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschafteneng
dc.relation.doihttps://doi.org/10.3762/BJNANO.10.117
dc.relation.essn2190-4286
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc620eng
dc.subject.ddc540eng
dc.subject.otherCurrent-voltageeng
dc.subject.otherElectroluminescenceeng
dc.subject.otherExternal quantum efficiency (EQE)eng
dc.subject.otherNanowire LEDeng
dc.subject.otherSingle nanowireeng
dc.titleElectroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensembleeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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