Control of etch pit formation for epitaxial growth of graphene on germanium

dc.bibliographicCitation.firstPage85306eng
dc.bibliographicCitation.issue8eng
dc.bibliographicCitation.journalTitleJournal of applied physics : AIP's archival journal for significant new results in applied physicseng
dc.bibliographicCitation.volume126eng
dc.contributor.authorBecker, Andreas
dc.contributor.authorWenger, Christian
dc.contributor.authorDabrowski, Jarek
dc.date.accessioned2021-11-16T13:31:34Z
dc.date.available2021-11-16T13:31:34Z
dc.date.issued2019
dc.description.abstractGraphene epitaxy on germanium by chemical vapor deposition is a promising approach to integrate graphene into microelectronics, but the synthesis is still accompanied by several challenges such as the high process temperature, the reproducibility of growth, and the formation of etch pits during the process. We show that the substrate cleaning by preannealing in molecular hydrogen, which is crucial to successful and reproducible graphene growth, requires a high temperature and dose. During both substrate cleaning and graphene growth, etch pits can develop under certain conditions and disrupt the synthesis process. We explain the mechanisms how these etch pits may form by preferential evaporation of substrate, how substrate topography is related to the state of the cleaning process, and how etch pit formation during graphene growth can be controlled by choice of a sufficiently high precursor flow. Our study explains how graphene can be grown reliably on germanium at high temperature and thereby lays the foundation for further optimization of the growth process. © 2019 Author(s).eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7311
dc.identifier.urihttps://doi.org/10.34657/6358
dc.language.isoengeng
dc.publisherMelville, NY : American Inst. of Physicseng
dc.relation.doihttps://doi.org/10.1063/1.5108774
dc.relation.essn1089-7550
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.otherChemical vapor depositioneng
dc.subject.otherCleaningeng
dc.subject.otherGermaniumeng
dc.subject.otherMicroelectronicseng
dc.subject.otherTopographyeng
dc.subject.otherCleaning processeng
dc.subject.otherHigh temperatureeng
dc.subject.otherMolecular hydrogeneng
dc.subject.otherProcess temperatureeng
dc.subject.otherReproducibilitieseng
dc.subject.otherSubstrate cleaningeng
dc.subject.otherSubstrate topographyeng
dc.subject.otherSynthesis processeng
dc.subject.otherGrapheneeng
dc.titleControl of etch pit formation for epitaxial growth of graphene on germaniumeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectPhysikeng
wgl.typeZeitschrifteng
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