Behaviour of rf sputter deposited SiO2 and AI2O3 diffusion barriers on float glass at 300 °C in air

dc.bibliographicCitation.firstPage	331
dc.bibliographicCitation.journalTitle	Glastechnische Berichte
dc.bibliographicCitation.lastPage	333
dc.bibliographicCitation.volume	66
dc.contributor.author	Chaissac, Martine
dc.contributor.author	Claus, Jürgen
dc.contributor.author	Borchardt, Günter
dc.contributor.author	Slowik, Jacek
dc.contributor.author	Frischat, Günther Heinz
dc.contributor.author	Scherrer, Stanislas
dc.contributor.author	Weber, Sylvain
dc.date.accessioned	2024-08-27T15:17:41Z
dc.date.available	2024-08-27T15:17:41Z
dc.date.issued	1993
dc.description.abstract	In order to study the resistance of high-frequency sputtered thin SiO2 and AI2O3 coatings on float glass to sodium diffusion, coated glasses were submitted to heat treatments in air. The element distribution in the coatings and in the substrates was measured with neutral primary beam-secondary ion mass spectrometry.	ger
dc.description.version	publishedVersion
dc.identifier.uri	https://oa.tib.eu/renate/handle/123456789/14993
dc.identifier.uri	https://doi.org/10.34657/14015
dc.language.iso	eng
dc.publisher	Offenbach : Verlag der Deutschen Glastechnischen Gesellschaft
dc.relation.issn	0017-1085
dc.rights.license	CC BY 3.0 DE
dc.rights.uri	https://creativecommons.org/licenses/by/3.0/de/
dc.subject.ddc	660
dc.title	Behaviour of rf sputter deposited SiO2 and AI2O3 diffusion barriers on float glass at 300 °C in air	ger
dc.type	Article
dc.type	Text
tib.accessRights	openAccess

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