Behaviour of rf sputter deposited SiO2 and AI2O3 diffusion barriers on float glass at 300 °C in air

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dc.bibliographicCitation.firstPage331
dc.bibliographicCitation.lastPage333
dc.bibliographicCitation.volume66
dc.contributor.authorChaissac, Martine
dc.contributor.authorClaus, Jürgen
dc.contributor.authorBorchardt, Günter
dc.contributor.authorSlowik, Jacek
dc.contributor.authorFrischat, Günther Heinz
dc.contributor.authorScherrer, Stanislas
dc.contributor.authorWeber, Sylvain
dc.date.accessioned2024-08-27T15:17:41Z
dc.date.available2024-08-27T15:17:41Z
dc.date.issued1993
dc.description.abstractIn order to study the resistance of high-frequency sputtered thin SiO2 and AI2O3 coatings on float glass to sodium diffusion, coated glasses were submitted to heat treatments in air. The element distribution in the coatings and in the substrates was measured with neutral primary beam-secondary ion mass spectrometry.
dc.description.versionpublishedVersion
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/14993
dc.identifier.urihttps://doi.org/10.34657/14015
dc.language.isoeng
dc.publisherOffenbach : Verlag der Deutschen Glastechnischen Gesellschaft
dc.relation.ispartofseriesGlastechnische Berichte
dc.relation.issn0946-7475
dc.rights.licenseCC BY 3.0 DE
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/de/
dc.subject.ddc660
dc.titleBehaviour of rf sputter deposited SiO2 and AI2O3 diffusion barriers on float glass at 300 °C in air
dc.typearticle
dc.typeText
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