Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

Abstract

We report the fabrication of Ni2.7Mn0.9Ga0.4/InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized by tailoring the size and strain of the bilayer. The structure and magnetic properties of both, the initial films and the rolled-up microtubes, are investigated by electron microscopy, X-ray techniques and magnetization measurements. A tetragonal lattice with c/a = 2.03 (film) and c/a = 2.01 (tube) is identified for the Ni2.7Mn0.9Ga0.4 alloy. Furthermore, a significant influence of the cylindrical geometry and strain relaxation induced by roll-up on the magnetic properties of the tube is found.

Description
Keywords
Cylinders (shapes), Electric windings, Gallium, Gallium alloys, Gallium arsenide, Magnetic properties, Manganese, Molecular beam epitaxy, Nickel, Semiconducting gallium
Citation
Müller, C., Neckel, I., Monecke, M., Dzhagan, V., Salvan, G., Schulze, S., et al. (2016). Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes. 6(76). https://doi.org//10.1039/c6ra13684b
License
CC BY 3.0 Unported