Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
dc.bibliographicCitation.firstPage | 213501 | eng |
dc.bibliographicCitation.issue | 21 | eng |
dc.bibliographicCitation.journalTitle | Applied Physics Letters | eng |
dc.bibliographicCitation.volume | 109 | eng |
dc.contributor.author | Chabak, Kelson D. | |
dc.contributor.author | Moser, Neil | |
dc.contributor.author | Green, Andrew J. | |
dc.contributor.author | Walker, Dennis E. | |
dc.contributor.author | Tetlak, Stephen E. | |
dc.contributor.author | Heller, Eric | |
dc.contributor.author | Crespo, Antonio | |
dc.contributor.author | Fitch, Robert | |
dc.contributor.author | McCandless, Jonathan P. | |
dc.contributor.author | Leedy, Kevin | |
dc.contributor.author | Baldini, Michele | |
dc.contributor.author | Wagner, Gunter | |
dc.contributor.author | Galazka, Zbigniew | |
dc.contributor.author | Li, Xiuling | |
dc.contributor.author | Jessen, Gregg | |
dc.date.accessioned | 2022-05-18T05:06:53Z | |
dc.date.available | 2022-05-18T05:06:53Z | |
dc.date.issued | 2016 | |
dc.description.abstract | Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/8984 | |
dc.identifier.uri | https://doi.org/10.34657/8022 | |
dc.language.iso | eng | eng |
dc.publisher | Melville, NY : American Inst. of Physics | eng |
dc.relation.doi | https://doi.org/10.1063/1.4967931 | |
dc.relation.essn | 1077-3118 | |
dc.relation.issn | 0003-6951 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | Alumina | eng |
dc.subject.other | Aluminum oxide | eng |
dc.subject.other | Boron compounds | eng |
dc.subject.other | Chlorine compounds | eng |
dc.subject.other | Electric breakdown | eng |
dc.subject.other | FinFET | eng |
dc.subject.other | Fins (heat exchange) | eng |
dc.subject.other | Gate dielectrics | eng |
dc.subject.other | Heterojunction bipolar transistors | eng |
dc.subject.other | High electron mobility transistors | eng |
dc.subject.other | Magnesium compounds | eng |
dc.subject.other | Plasma etching | eng |
dc.subject.other | Semiconductor junctions | eng |
dc.subject.other | Threshold voltage | eng |
dc.subject.other | Tin compounds | eng |
dc.subject.other | Enhancement modes | eng |
dc.subject.other | Fin field effect transistors | eng |
dc.subject.other | Gallium oxides | eng |
dc.subject.other | High breakdown voltage | eng |
dc.subject.other | High-voltage operation | eng |
dc.subject.other | On-resistance | eng |
dc.subject.other | Semi-insulating | eng |
dc.subject.other | Triangular cross-sections | eng |
dc.subject.other | Gallium compounds | eng |
dc.title | Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | MBI | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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