Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy

dc.bibliographicCitation.firstPage263102
dc.bibliographicCitation.issue26
dc.bibliographicCitation.journalTitleApplied physics letterseng
dc.bibliographicCitation.volume113
dc.contributor.authorMunshi, A. Mazid
dc.contributor.authorKim, Dong-Chul
dc.contributor.authorHeimdal, Carl Philip
dc.contributor.authorHeilmann, Martin
dc.contributor.authorChristiansen, Silke H.
dc.contributor.authorVullum, Per Erik
dc.contributor.authorvan Helvoort, Antonius T. J.
dc.contributor.authorWeman, Helge
dc.date.accessioned2023-01-19T09:43:50Z
dc.date.available2023-01-19T09:43:50Z
dc.date.issued2018
dc.description.abstractWide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III-V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six {10 (1) over bar1} semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/10926
dc.identifier.urihttp://dx.doi.org/10.34657/9952
dc.language.isoeng
dc.publisherMelville, NY : American Inst. of Physics
dc.relation.doihttps://doi.org/10.1063/1.5052054
dc.relation.essn1077-3118
dc.relation.issn0003-6951
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc530
dc.subject.otherAluminum alloyseng
dc.subject.otherAluminum gallium nitrideeng
dc.subject.otherGallium alloyseng
dc.subject.otherGrapheneeng
dc.subject.otherIII-V semiconductorseng
dc.subject.otherLattice mismatcheng
dc.subject.otherNitrideseng
dc.subject.otherOptoelectronic deviceseng
dc.subject.otherOrganometallicseng
dc.subject.otherSemiconductor alloyseng
dc.subject.otherSubstrateseng
dc.subject.otherThermal expansioneng
dc.subject.otherVan der Waals forceseng
dc.subject.otherWhispering gallery modeseng
dc.subject.otherWide band gap semiconductorseng
dc.titleSelective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxyeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDI
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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