Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy
dc.bibliographicCitation.firstPage | 263102 | |
dc.bibliographicCitation.issue | 26 | |
dc.bibliographicCitation.volume | 113 | |
dc.contributor.author | Munshi, A. Mazid | |
dc.contributor.author | Kim, Dong-Chul | |
dc.contributor.author | Heimdal, Carl Philip | |
dc.contributor.author | Heilmann, Martin | |
dc.contributor.author | Christiansen, Silke H. | |
dc.contributor.author | Vullum, Per Erik | |
dc.contributor.author | van Helvoort, Antonius T. J. | |
dc.contributor.author | Weman, Helge | |
dc.date.accessioned | 2023-01-19T09:43:50Z | |
dc.date.available | 2023-01-19T09:43:50Z | |
dc.date.issued | 2018 | |
dc.description.abstract | Wide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III-V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six {10 (1) over bar1} semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/10926 | |
dc.identifier.uri | http://dx.doi.org/10.34657/9952 | |
dc.language.iso | eng | |
dc.publisher | Melville, NY : American Inst. of Physics | |
dc.relation.doi | https://doi.org/10.1063/1.5052054 | |
dc.relation.essn | 1077-3118 | |
dc.relation.ispartofseries | Applied physics letters 113 (2018), Nr. 26 | |
dc.relation.issn | 0003-6951 | |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.subject | Aluminum alloys | eng |
dc.subject | Aluminum gallium nitride | eng |
dc.subject | Gallium alloys | eng |
dc.subject | Graphene | eng |
dc.subject | III-V semiconductors | eng |
dc.subject | Lattice mismatch | eng |
dc.subject | Nitrides | eng |
dc.subject | Optoelectronic devices | eng |
dc.subject | Organometallics | eng |
dc.subject | Semiconductor alloys | eng |
dc.subject | Substrates | eng |
dc.subject | Thermal expansion | eng |
dc.subject | Van der Waals forces | eng |
dc.subject | Whispering gallery modes | eng |
dc.subject | Wide band gap semiconductors | eng |
dc.subject.ddc | 530 | |
dc.title | Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy | eng |
dc.type | article | eng |
dc.type | Text | eng |
dcterms.bibliographicCitation.journalTitle | Applied physics letters | |
tib.accessRights | openAccess | eng |
wgl.contributor | PDI | |
wgl.subject | Physik | ger |
wgl.type | Zeitschriftenartikel | ger |
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