Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

dc.bibliographicCitation.firstPage1700955
dc.bibliographicCitation.issue6
dc.bibliographicCitation.journalTitleAdvanced scienceeng
dc.bibliographicCitation.volume5
dc.contributor.authorvon den Driesch, Nils
dc.contributor.authorStange, Daniela
dc.contributor.authorRainko, Denis
dc.contributor.authorPovstugar, Ivan
dc.contributor.authorZaumseil, Peter
dc.contributor.authorCapellini, Giovanni
dc.contributor.authorSchröder, Thomas
dc.contributor.authorDenneulin, Thibaud
dc.contributor.authorIkonic, Zoran
dc.contributor.authorHartmann, Jean-Michel
dc.contributor.authorSigg, Hans
dc.contributor.authorMantl, Siegfried
dc.contributor.authorGrützmacher, Detlev
dc.contributor.authorBuca, Dan
dc.date.accessioned2023-01-24T08:05:50Z
dc.date.available2023-01-24T08:05:50Z
dc.date.issued2018
dc.description.abstractGrowth and characterization of advanced group IV semiconductor materials with CMOS-compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III–V material system. Different types of double heterostructures and multi-quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark-field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal-oxide-semiconductor (CMOS)-compatible group IV lasers.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/10971
dc.identifier.urihttp://dx.doi.org/10.34657/9997
dc.language.isoeng
dc.publisherWeinheim : Wiley-VCH
dc.relation.doihttps://doi.org/10.1002/advs.201700955
dc.relation.essn2198-3844
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.subject.ddc500
dc.subject.ddc600
dc.subject.ddc624
dc.subject.otherGeSneng
dc.subject.otherheterostructureseng
dc.subject.otherlaserseng
dc.subject.othermulti-quantum wellseng
dc.subject.otherSiGeSneng
dc.titleAdvanced GeSn/SiGeSn Group IV Heterostructure Laserseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccess
wgl.contributorIHP
wgl.subjectIngenieurwissenschaftenger
wgl.typeZeitschriftenartikelger
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