Modeling and simulation of strained quantum wells in semiconductorlasers
dc.bibliographicCitation.seriesTitle | WIAS Preprints | eng |
dc.bibliographicCitation.volume | 582 | |
dc.contributor.author | Bandelow, Uwe | |
dc.contributor.author | Kaiser, Hans-Christoph | |
dc.contributor.author | Koprucki, Thomas | |
dc.contributor.author | Rehberg, Joachim | |
dc.date.accessioned | 2016-03-24T17:38:13Z | |
dc.date.available | 2019-06-28T08:02:26Z | |
dc.date.issued | 2000 | |
dc.description.abstract | A model allowing for efficiently obtaining band structure information on semiconductor Quantum Well structures will be demonstrated which is based on matrix-valued kp-Schrödinger operators. Effects such as confinement, band mixing, spin-orbit interaction and strain can be treated consistently. The impact of prominent Coulomb effects can be calculated by including the Hartree interaction via the Poisson equation and the bandgap renormalization via exchange-correlation potentials, resulting in generalized (matrix-valued) Schrödinger-Poisson systems. Band structure information enters via densities and the optical response function into comprehensive simulations of Multi Quantum Well lasers. These device simulations yield valuable information on device characteristics, including effects of carrier transport, waveguiding and heating and can be used for optimization. | eng |
dc.description.version | publishedVersion | eng |
dc.format | application/pdf | |
dc.identifier.issn | 0946-8633 | |
dc.identifier.uri | https://doi.org/10.34657/2659 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/1836 | |
dc.language.iso | eng | eng |
dc.publisher | Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik | eng |
dc.relation.issn | 0946-8633 | eng |
dc.rights.license | This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties. | eng |
dc.rights.license | Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. | ger |
dc.subject.ddc | 510 | eng |
dc.subject.other | Quantum-Well semiconductor lasers | eng |
dc.subject.other | simulation of optoelectronic devices | eng |
dc.subject.other | nanoelectronics | eng |
dc.subject.other | kp-Schrödinger operators | eng |
dc.subject.other | Schrödinger-Poission systems | eng |
dc.subject.other | eigenvalue problems | eng |
dc.title | Modeling and simulation of strained quantum wells in semiconductorlasers | eng |
dc.type | Report | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | WIAS | eng |
wgl.subject | Mathematik | eng |
wgl.type | Report / Forschungsbericht / Arbeitspapier | eng |
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