Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials
dc.bibliographicCitation.firstPage | 20633 | eng |
dc.bibliographicCitation.journalTitle | Scientific Reports | eng |
dc.bibliographicCitation.lastPage | 2488 | eng |
dc.bibliographicCitation.volume | 6 | eng |
dc.contributor.author | Mitrofanov, Kirill V. | |
dc.contributor.author | Fons, Paul | |
dc.contributor.author | Makino, Kotaro | |
dc.contributor.author | Terashima, Ryo | |
dc.contributor.author | Shimada, Toru | |
dc.contributor.author | Kolobov, Alexander, V. | |
dc.contributor.author | Tominaga, Junji | |
dc.contributor.author | Bragaglia, Valeria | |
dc.contributor.author | Giussani, Alessandro | |
dc.contributor.author | Calarco, Raffaella | |
dc.contributor.author | Riechert, Henning | |
dc.contributor.author | Sato, Takahiro | |
dc.contributor.author | Katayama, Tetsuo | |
dc.contributor.author | Ogawa, Kanade | |
dc.contributor.author | Togashi, Tadashi | |
dc.contributor.author | Yabashi, Makina | |
dc.contributor.author | Wall, Simon | |
dc.contributor.author | Brewe, Dale | |
dc.contributor.author | Hase, Muneaki | |
dc.date.accessioned | 2020-01-07T06:43:12Z | |
dc.date.available | 2020-01-07T06:43:12Z | |
dc.date.issued | 2016 | |
dc.description.abstract | Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge2Sb2Te5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit and improved energy efficiency and reliability of phase-change memory technologies. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://doi.org/10.34657/97 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/4826 | |
dc.language.iso | eng | eng |
dc.publisher | London : Nature Publishing | eng |
dc.relation.doi | https://doi.org/10.1038/srep20633 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 620 | eng |
dc.subject.other | condensed matter | eng |
dc.subject.other | phase transitions | eng |
dc.subject.other | thin films | eng |
dc.title | Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | PDI | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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