Large spin splitting of GaN electronic states induced by Gd doping

dc.contributor.authorSapega, V.F.
dc.contributor.authorRamsteiner, Manfred
dc.contributor.authorDhar, Subhabrata
dc.contributor.authorBrandt, Oliver
dc.contributor.authorPloog, K.H.
dc.date.accessioned2016-03-24T17:38:05Z
dc.date.available2019-06-28T12:38:19Z
dc.date.issued2005
dc.description.abstractWe present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong influence of Gd doping on the electronic states in the GaN matrix. We observe that the spin splitting of the valence band reverses its sign for Gd concentrations as low as 1.6 x 10^{16} cm^{-3}. This remarkable result can be understood only in terms of a long range induction of magnetic moments in the surrounding GaN matrix by the Gd ions.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3965
dc.language.isoengeng
dc.publisherCambridge : arXiveng
dc.relation.urihttp://arxiv.org/abs/cond-mat/0509198
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc530eng
dc.titleLarge spin splitting of GaN electronic states induced by Gd dopingeng
dc.typeOthereng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeSonstigeseng
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