Epitaxial interfaces between crystallographically mismatched materials

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dc.bibliographicCitation.journalTitlePhysical Review Letterseng
dc.contributor.authorErwin, Steven C.
dc.contributor.authorGao, Cunxu
dc.contributor.authorRoder, Claudia
dc.contributor.authorLähnemann, Jonas
dc.contributor.authorBrandt, Oliver
dc.date.available2019-06-28T12:38:19Z
dc.date.issued2011
dc.description.abstractWe report an unexpected mechanism by which an epitaxial interface can form between materials having strongly mismatched lattice constants. A simple model is proposed in which one material tilts out of the interface plane to create a coincidence-site lattice that balances two competing geometrical criteria---low residual strain and short coincidence-lattice period. We apply this model, along with complementary first-principles total-energy calculations, to the interface formed by molecular-beam epitaxy of cubic Fe on hexagonal GaN and find excellent agreement between theory and experiment.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3962
dc.language.isoengeng
dc.publisherCambridge : arXiveng
dc.relation.urihttp://de.arxiv.org/abs/1106.2955
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
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dc.subject.ddc530eng
dc.titleEpitaxial interfaces between crystallographically mismatched materialseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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