Magnetic-field- and temperature-dependent fermi surface of CeBiPt
dc.bibliographicCitation.journalTitle | New Journal of Physics | eng |
dc.bibliographicCitation.volume | 8 | |
dc.contributor.author | Wosnitza, J. | |
dc.contributor.author | Goll, G. | |
dc.contributor.author | Bianchi, A.D. | |
dc.contributor.author | Bergk, B. | |
dc.contributor.author | Kozlova, N. | |
dc.contributor.author | Opahle, I. | |
dc.contributor.author | Elgazzar, S. | |
dc.contributor.author | Richter, Manuel | |
dc.contributor.author | Stockert, O. | |
dc.contributor.author | Löhneysen, H.V. | |
dc.contributor.author | Yoshino, T. | |
dc.contributor.author | Takabatake, T. | |
dc.date.accessioned | 2018-06-13T16:44:32Z | |
dc.date.available | 2019-06-28T12:40:09Z | |
dc.date.issued | 2006 | |
dc.description.abstract | The half-Heusler compounds CeBiPt and LaBiPt are semimetals with very low charge-carrier concentrations as evidenced by Shubnikov–de Haas (SdH) and Hall-effect measurements. Neutron-scattering results reveal a simple antiferromagnetic structure in CeBiPt below TN = 1.15 K. The band structure of CeBiPt sensitively depends on temperature, magnetic field and stoichiometry. Above a certain, sample-dependent, threshold field (B>25 T), the SdH signal disappears and the Hall coefficient reduces significantly. These effects are absent in the non-4f compound LaBiPt. Electronic-band-structure calculations can well explain the observed behaviour by a 4f-polarization-induced Fermi-surface modification. | eng |
dc.description.version | publishedVersion | eng |
dc.format | application/pdf | |
dc.identifier.uri | https://doi.org/10.34657/1577 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/4394 | |
dc.language.iso | eng | eng |
dc.publisher | Milton Park : Taylor & Francis | eng |
dc.relation.doi | https://doi.org/10.1088/1367-2630/8/9/174 | |
dc.rights.license | CC BY-NC-SA 3.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-sa/3.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | Antiferromagnetic materials | eng |
dc.subject.other | Band structure | eng |
dc.subject.other | Bismuth compounds | eng |
dc.subject.other | Carrier concentration | eng |
dc.subject.other | Charge carriers | eng |
dc.subject.other | Fermi surface | eng |
dc.subject.other | Hall effect | eng |
dc.subject.other | Magnetic field effects | eng |
dc.subject.other | Metalloids | eng |
dc.subject.other | Neutron scattering | eng |
dc.subject.other | Platinum compounds | eng |
dc.subject.other | Polarization | eng |
dc.subject.other | Shubnikov-de Haas effect | eng |
dc.subject.other | Stoichiometry | eng |
dc.subject.other | Surface treatment | eng |
dc.title | Magnetic-field- and temperature-dependent fermi surface of CeBiPt | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IFWD | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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