Investigation of the strain-sensitive superconducting transition of BaFe1.8Co0.2As2 thin films utilizing piezoelectric substrates

dc.bibliographicCitation.issuePart 1
dc.bibliographicCitation.journalTitleJournal of Physics: Conference Serieseng
dc.bibliographicCitation.volume507
dc.contributor.authorTrommler, S.
dc.contributor.authorHänisch, J.
dc.contributor.authorIida, K.
dc.contributor.authorKurth, F.
dc.contributor.authorSchultz, L.
dc.contributor.authorHolzapfel, B.
dc.contributor.authorHühne, R.
dc.date.accessioned2018-06-04T16:41:15Z
dc.date.available2019-06-28T12:39:51Z
dc.date.issued2014
dc.description.abstractThe preparation of biaxially textured BaFe1.8Co0.2As2 thin films has been optimized on MgO single crystals and transfered to piezoelectric (001) Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. By utilizing the inverse piezoelectric effect the lattice parameter of these substrates can be controlled applying an electric field, leading to a induction of biaxial strain into the superconducting layer. High electric fields were used to achieve a total strain of up to 0.05% at low temperatures. A sharpening of the resistive transition and a shift of about 0.6 K to higher temperatures was found at a compressive strain of 0.035%.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1560
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4352
dc.language.isoengeng
dc.publisherMilton Park : Taylor & Franciseng
dc.relation.doihttps://doi.org/10.1088/1742-6596/507/1/012049
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc530eng
dc.subject.gndKonferenzschriftger
dc.subject.otherElectric fieldseng
dc.subject.otherFilm preparationeng
dc.subject.otherLeadSingle crystalseng
dc.subject.otherThin filmseng
dc.subject.otherPiezoelectricityeng
dc.subject.otherSuperconducting filmseng
dc.titleInvestigation of the strain-sensitive superconducting transition of BaFe1.8Co0.2As2 thin films utilizing piezoelectric substrateseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIFWDeng
wgl.subjectPhysikeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeKonferenzbeitrageng
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