Cobalt as a promising dopant for producing semi-insulating β -Ga2O3crystals: Charge state transition levels from experiment and theory

dc.bibliographicCitation.firstPage111109
dc.bibliographicCitation.issue11
dc.bibliographicCitation.journalTitleAPL Materialseng
dc.bibliographicCitation.volume10
dc.contributor.authorSeyidov, Palvan
dc.contributor.authorVarley, Joel B.
dc.contributor.authorGalazka, Zbigniew
dc.contributor.authorChou, Ta-Shun
dc.contributor.authorPopp, Andreas
dc.contributor.authorFiedler, Andreas
dc.contributor.authorIrmscher, Klaus
dc.date.accessioned2023-02-06T10:22:47Z
dc.date.available2023-02-06T10:22:47Z
dc.date.issued2022
dc.description.abstractOptical absorption and photoconductivity measurements of Co-doped β-Ga2O3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionization cross sections are fitted by a phenomenological model considering electron-phonon coupling. The obtained fitting parameters: thermal ionization (zero-phonon transition) energy, Franck-Condon shift, and effective phonon energy are compared with corresponding values predicted by first principle calculations based on density functional theory. A (+/0) donor level ∼0.85 eV above the valence band maximum and a (0/-) acceptor level ∼2.1 eV below the conduction band minimum are consistently derived. Temperature-dependent electrical resistivity measurement at elevated temperatures (up to 1000 K) yields a thermal activation energy of 2.1 ± 0.1 eV, consistent with the position of the Co acceptor level. Furthermore, the results show that Co doping is promising for producing semi-insulating β-Ga2O3 crystals.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/11309
dc.identifier.urihttp://dx.doi.org/10.34657/10345
dc.language.isoeng
dc.publisherMelville, NY : AIP Publ.
dc.relation.doihttps://doi.org/10.1063/5.0112915
dc.relation.essn2166-532X
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.subject.ddc620
dc.subject.ddc600
dc.subject.otherBoroneng
dc.subject.otherCharge transfereng
dc.subject.otherCobalteng
dc.subject.otherDensity functional theoryeng
dc.subject.otherDoping (additives)eng
dc.subject.otherElectron-phonon interactionseng
dc.subject.otherGallium compoundseng
dc.subject.otherLight absorptioneng
dc.subject.otherPhotoionizationeng
dc.subject.otherValence bandseng
dc.titleCobalt as a promising dopant for producing semi-insulating β -Ga2O3crystals: Charge state transition levels from experiment and theoryeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccess
wgl.contributorIKZ
wgl.subjectIngenieurwissenschaftenger
wgl.typeZeitschriftenartikelger
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