InN nanowires: Growth and optoelectronic properties

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dc.bibliographicCitation.firstPage2137eng
dc.bibliographicCitation.issue11eng
dc.bibliographicCitation.journalTitleMaterialseng
dc.bibliographicCitation.volume5eng
dc.contributor.authorCalarco, R.
dc.date.accessioned2020-09-25T12:04:54Z
dc.date.available2020-09-25T12:04:54Z
dc.date.issued2012
dc.description.abstractAn overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://doi.org/10.34657/4328
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/5699
dc.language.isoengeng
dc.publisherBasel : MDPI AGeng
dc.relation.doihttps://doi.org/10.3390/ma5112137
dc.relation.issn1996-1944
dc.rights.licenseCC BY-NC-SA 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/3.0/eng
dc.subject.ddc620eng
dc.subject.otherElectrical propertieseng
dc.subject.otherIII-Veng
dc.subject.otherMolecular beam epitaxy (MBE)eng
dc.subject.otherNanoscaleeng
dc.subject.otherOptical propertieseng
dc.subject.otherOptoelectroniceng
dc.subject.otherPhotoconductivityeng
dc.subject.otherSelf-assembly semiconductingeng
dc.subject.otherCatalyst-freeeng
dc.subject.otherChemical vapor deposition processeng
dc.subject.otherIII-Veng
dc.subject.otherInN Nanowireseng
dc.subject.otherNano scaleeng
dc.subject.otherOptoelectroniceng
dc.subject.otherOptoelectronic propertieseng
dc.subject.otherCatalystseng
dc.subject.otherChemical vapor depositioneng
dc.subject.otherEpitaxial growtheng
dc.subject.otherMolecular beam epitaxyeng
dc.subject.otherNanowireseng
dc.subject.otherOptical propertieseng
dc.subject.otherPhotoconductivityeng
dc.subject.otherSelf assemblyeng
dc.subject.otherTransport propertieseng
dc.subject.otherElectric propertieseng
dc.titleInN nanowires: Growth and optoelectronic propertieseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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