Control of Positive and Negative Magnetoresistance in Iron Oxide : Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices
dc.bibliographicCitation.firstPage | 2543 | eng |
dc.bibliographicCitation.issue | 8 | eng |
dc.bibliographicCitation.journalTitle | ACS applied electronic materials | eng |
dc.bibliographicCitation.lastPage | 2549 | eng |
dc.bibliographicCitation.volume | 2 | eng |
dc.contributor.author | Nichterwitz, Martin | |
dc.contributor.author | Honnali, Shashank | |
dc.contributor.author | Zehner, Jonas | |
dc.contributor.author | Schneider, Sebastian | |
dc.contributor.author | Pohl, Darius | |
dc.contributor.author | Schiemenz, Sandra | |
dc.contributor.author | Goennenwein, Sebastian T.B. | |
dc.contributor.author | Nielsch, Kornelius | |
dc.contributor.author | Leistner, Karin | |
dc.date.accessioned | 2021-08-24T05:45:40Z | |
dc.date.available | 2021-08-24T05:45:40Z | |
dc.date.issued | 2020 | |
dc.description.abstract | The perspective of energy-efficient and tunable functional magnetic nanostructures has triggered research efforts in the fields of voltage control of magnetism and spintronics. We investigate the magnetotransport properties of nanocomposite iron oxide/iron thin films with a nominal iron thickness of 5-50 nm and find a positive magnetoresistance at small thicknesses. The highest magnetoresistance was found for 30 nm Fe with +1.1% at 3 T. This anomalous behavior is attributed to the presence of Fe3O4-Fe nanocomposite regions due to grain boundary oxidation. At the Fe3O4/Fe interfaces, spin-polarized electrons in the magnetite can be scattered and reoriented. A crossover to negative magnetoresistance (-0.11%) is achieved at a larger thickness (>40 nm) when interface scattering effects become negligible as more current flows through the iron layer. Electrolytic gating of this system induces voltage-triggered redox reactions in the Fe3O4 regions and thereby enables voltage-tuning of the magnetoresistance with the locally oxidized regions as the active tuning elements. In the low-magnetic-field region (<1 T), a crossover from positive to negative magnetoresistance is achieved by a voltage change of only 1.72 V. At 3 T, a relative change of magnetoresistance about -45% during reduction was achieved for the 30 nm Fe sample. The present low-voltage approach signifies a step forward to practical and tunable room-temperature magnetoresistance-based nanodevices, which can boost the development of nanoscale and energy-efficient magnetic field sensors with high sensitivity, magnetic memories, and magnetoelectric devices in general. Copyright © 2020 American Chemical Society. | eng |
dc.description.fonds | Leibniz_Fonds | |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/6574 | |
dc.identifier.uri | https://doi.org/10.34657/5621 | |
dc.language.iso | eng | eng |
dc.relation.doi | https://doi.org/10.1021/acsaelm.0c00448 | |
dc.relation.essn | 2637-6113 | |
dc.rights.license | ACS AuthorChoice | eng |
dc.rights.uri | https://acsopenscience.org/open-access/licensing-options/ | eng |
dc.subject.ddc | 540 | eng |
dc.subject.ddc | 620 | eng |
dc.subject.other | iron films | eng |
dc.subject.other | magnetite | eng |
dc.subject.other | magneto-ionic control | eng |
dc.subject.other | magnetoresistance | eng |
dc.subject.other | voltage control of magnetism | eng |
dc.title | Control of Positive and Negative Magnetoresistance in Iron Oxide : Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IFWD | eng |
wgl.subject | Chemie | eng |
wgl.type | Zeitschriftenartikel | eng |
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