Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots
dc.bibliographicCitation.journalTitle | Nature Communications | eng |
dc.bibliographicCitation.volume | 7 | |
dc.contributor.author | Chen, Yan | |
dc.contributor.author | Zhang, Jiaxiang | |
dc.contributor.author | Zopf, Michael | |
dc.contributor.author | Jung, Kyubong | |
dc.contributor.author | Zhang, Yang | |
dc.contributor.author | Keil, Robert | |
dc.contributor.author | Ding, Fei | |
dc.contributor.author | Schmidt, Oliver G. | |
dc.date.accessioned | 2018-06-08T16:42:48Z | |
dc.date.available | 2019-06-28T07:31:50Z | |
dc.date.issued | 2016 | |
dc.description.abstract | Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms. | eng |
dc.description.version | publishedVersion | eng |
dc.format | application/pdf | |
dc.format | application/pdf | |
dc.identifier.uri | https://doi.org/10.34657/4978 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/1487 | |
dc.language.iso | eng | eng |
dc.publisher | London : Nature Publishing Group | eng |
dc.relation.doi | https://doi.org/10.1038/ncomms10387 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 620 | eng |
dc.subject.other | Synthesis and processing | eng |
dc.subject.other | Two-dimensional materials | eng |
dc.title | Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IFWD | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |