Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching
dc.bibliographicCitation.firstPage | 1 | |
dc.bibliographicCitation.lastPage | 7 | |
dc.bibliographicCitation.volume | 2018 | |
dc.contributor.author | Jia, G. | |
dc.contributor.author | Plentz, J. | |
dc.contributor.author | Gawlik, A. | |
dc.contributor.author | Azar, A.S. | |
dc.contributor.author | Stokkan, G. | |
dc.contributor.author | Syvertsen, M. | |
dc.contributor.author | Carvalho, P.A. | |
dc.contributor.author | Dellith, J. | |
dc.contributor.author | Dellith, A. | |
dc.contributor.author | Andrä, G. | |
dc.contributor.author | Ulyashin, A. | |
dc.date.accessioned | 2023-03-06T07:55:37Z | |
dc.date.available | 2023-03-06T07:55:37Z | |
dc.date.issued | 2018 | |
dc.description.abstract | In this study, laser-treated polycrystalline Si (pc-Si) wafers, fabricated by wire sawing of hot-pressed ingots sintered from Si powder, have been investigated. As-cut wafers and those with high-quality thin Si layers deposited on top of them by e-beam have been subjected to laser irradiation to clarify typical trends of structural modifications caused by laser treatments. Moreover, possibility to use laser-treated Si powder-based substrates for fabrication of advanced Si structures has been analysed. It is established that (i) Si powder-based wafers with thicknesses 180 μm can be fully (from the front to back side) or partly (subsurface region) remelted by a diode laser and grain sizes in laser-treated regions can be increased; (ii) a high-quality top layer can be fabricated by crystallization of an additional a-Si layer deposited by e-beam evaporation on top of the pc-Si; and (iii) silicon nanowires can be formed by metal-assisted wet chemical etching (MAWCE) of polished Si powder-based wafers and as-cut wafers irradiated with medium laser power, while a surface texturing on the as-cut pc-Si wafers occur, and no nanowires can form in the region subject to a liquid phase crystallization (LPC) caused by high-power laser treatments. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/11671 | |
dc.identifier.uri | http://dx.doi.org/10.34657/10704 | |
dc.language.iso | eng | |
dc.publisher | New York, NY [u.a.] : Hindawi Publ. Corp. | |
dc.relation.doi | https://doi.org/10.1155/2018/6563730 | |
dc.relation.essn | 1687-529X | |
dc.relation.ispartofseries | International Journal of Photoenergy 2018 (2018) | eng |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.subject | High quality | eng |
dc.subject | Laser treated | eng |
dc.subject | Laser treatment | eng |
dc.subject | Low-cost photovoltaics | eng |
dc.subject | Polycrystalline-Si | eng |
dc.subject | Powder-based | eng |
dc.subject | Si layer | eng |
dc.subject | Si wafer | eng |
dc.subject | Silicon powders | eng |
dc.subject | Wire-sawing | eng |
dc.subject.ddc | 540 | |
dc.subject.ddc | 660 | |
dc.title | Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching | eng |
dc.type | article | |
dc.type | Text | |
dcterms.bibliographicCitation.journalTitle | International Journal of Photoenergy | |
tib.accessRights | openAccess | |
wgl.contributor | IPHT | |
wgl.subject | Ingenieurwissenschaften | ger |
wgl.type | Zeitschriftenartikel | ger |
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