Modeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices
dc.bibliographicCitation.seriesTitle | WIAS Preprints | eng |
dc.bibliographicCitation.volume | 1806 | |
dc.contributor.author | Radziunas, Mindaugas | |
dc.contributor.author | Cˇ iegis, Raimondas | |
dc.date.accessioned | 2016-03-24T17:37:43Z | |
dc.date.available | 2019-06-28T08:18:03Z | |
dc.date.issued | 2013 | |
dc.description.abstract | A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts | eng |
dc.description.version | publishedVersion | eng |
dc.format | application/pdf | |
dc.identifier.issn | 0946-8633 | |
dc.identifier.uri | https://doi.org/10.34657/2660 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/3155 | |
dc.language.iso | eng | eng |
dc.publisher | Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik | eng |
dc.relation.issn | 0946-8633 | eng |
dc.rights.license | This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties. | eng |
dc.rights.license | Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. | ger |
dc.subject.ddc | 510 | eng |
dc.subject.other | Broad area device | eng |
dc.subject.other | traveling wave model | eng |
dc.subject.other | numerical scheme | eng |
dc.subject.other | simulations | eng |
dc.subject.other | beam improvement | eng |
dc.title | Modeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices | eng |
dc.type | Report | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | WIAS | eng |
wgl.subject | Mathematik | eng |
wgl.type | Report / Forschungsbericht / Arbeitspapier | eng |
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