Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

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dc.bibliographicCitation.firstPage4541eng
dc.bibliographicCitation.issue10eng
dc.bibliographicCitation.lastPage4560eng
dc.bibliographicCitation.volume69eng
dc.contributor.authorKissinger, Dietmar
dc.contributor.authorKahmen, Gerhard
dc.contributor.authorWeigel, Robert
dc.date.accessioned2022-03-03T13:00:05Z
dc.date.available2022-03-03T13:00:05Z
dc.date.issued2021
dc.description.abstractThis invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8133
dc.identifier.urihttps://doi.org/10.34657/7173
dc.language.isoengeng
dc.publisherNew York, NY : IEEEeng
dc.relation.doihttps://doi.org/10.1109/TMTT.2021.3095235
dc.relation.essn1557-9670
dc.relation.ispartofseriesIEEE transactions on microwave theory and techniques : MTT 69 (2021), Nr. 1eng
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectBiCMOS ICseng
dc.subjectBiCMOS integrated circuitseng
dc.subjectBipolar transistorseng
dc.subjectdata communicationeng
dc.subjectDopingeng
dc.subjectHeterojunction bipolar transistorseng
dc.subjectheterojunction bipolar transistors (HBTs)eng
dc.subjectMillimeter wave transistorseng
dc.subjectmillimeter-wave circuitseng
dc.subjectradareng
dc.subjectSiliconeng
dc.subjectSilicon germaniumeng
dc.subjectsubmillimeter-wave circuitseng
dc.subjecttransceivers (TRXs)eng
dc.subject.ddc620eng
dc.titleMillimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologieseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleIEEE transactions on microwave theory and techniques : MTTeng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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