Transition to the quantum hall regime in InAs nanowire cross-junctions

dc.bibliographicCitation.firstPage35028eng
dc.bibliographicCitation.journalTitleSemiconductor science and technology : devoted exclusively to semiconductor research and applicationseng
dc.contributor.authorGooth, Johannes
dc.contributor.authorBorg, Mattias
dc.contributor.authorSchmid, Heinz
dc.contributor.authorBologna, Nicolas
dc.contributor.authorRossell, Marta D.
dc.contributor.authorWirths, Stephan
dc.contributor.authorMoselund, Kirsten
dc.contributor.authorNielsch, Kornelius
dc.contributor.authorRiel, Heike
dc.date.accessioned2021-08-30T05:42:47Z
dc.date.available2021-08-30T05:42:47Z
dc.date.issued2019
dc.description.abstractWe present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2 /h) -1 . e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase. © 2019 IOP Publishing Ltd.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/6621
dc.identifier.urihttps://doi.org/10.34657/5668
dc.language.isoengeng
dc.publisherBristol : IOP Publ.eng
dc.relation.doihttps://doi.org/10.1088/1361-6641/ab0591
dc.relation.essn1361-6641
dc.relation.issn0268-1242
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc530eng
dc.subject.ddc620eng
dc.subject.otherIII-V semiconductorseng
dc.subject.otherIndium arsenideeng
dc.subject.otherQuantum Hall effecteng
dc.subject.otherSemiconductor quantum wellseng
dc.subject.otherTemperatureeng
dc.subject.otherConductance quantizationeng
dc.subject.otherElectrical transporteng
dc.subject.otherHigh magnetic fieldseng
dc.subject.otherInAseng
dc.subject.otherLongitudinal conductanceseng
dc.subject.otherQuantum Hall regimeeng
dc.subject.otherTASEeng
dc.subject.otherZero magnetic fieldseng
dc.subject.otherNanowireseng
dc.titleTransition to the quantum hall regime in InAs nanowire cross-junctionseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIFWDeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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