Three-Dimensional Composition and Electric Potential Mapping of III–V Core–Multishell Nanowires by Correlative STEM and Holographic Tomography

dc.bibliographicCitation.firstPage4777
dc.bibliographicCitation.issue8
dc.bibliographicCitation.journalTitleNano letters : a journal dedicated to nanoscience and nanotechnologyeng
dc.bibliographicCitation.lastPage4784
dc.bibliographicCitation.volume18
dc.contributor.authorWolf, Daniel
dc.contributor.authorHübner, René
dc.contributor.authorNiermann, Tore
dc.contributor.authorSturm, Sebastian
dc.contributor.authorPrete, Paola
dc.contributor.authorLovergine, Nico
dc.contributor.authorBüchner, Bernd
dc.contributor.authorLubk, Axel
dc.date.accessioned2022-12-23T09:32:02Z
dc.date.available2022-12-23T09:32:02Z
dc.date.issued2018-7-13
dc.description.abstractThe nondestructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential distribution in three-dimension but hitherto lacked a quantitative approach to separate potential variations due to chemical composition changes (mean inner potential, MIP) and space charges. In this Letter, we combine and correlate EHT and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) tomography on an individual ⟨111⟩ oriented GaAs–AlGaAs core–multishell nanowire (NW). We obtain excellent agreement between both methods in terms of the determined Al concentration within the AlGaAs shell, as well as thickness variations of the few nanometer thin GaAs shell acting as quantum well tube. Subtracting the MIP determined from the STEM tomogram, enables us to observe functional potentials at the NW surfaces and at the Au–NW interface, both ascribed to surface/interface pinning of the semiconductor Fermi level.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/10740
dc.identifier.urihttp://dx.doi.org/10.34657/9776
dc.language.isoeng
dc.publisherWashington, DC : ACS Publ.
dc.relation.doihttps://doi.org/10.1021/acs.nanolett.8b01270
dc.relation.essn1530-6992
dc.rights.licenseACS AuthorChoice
dc.rights.urihttps://pubs.acs.org/page/policy/authorchoice_termsofuse.html
dc.subject.ddc540
dc.subject.ddc660
dc.subject.other3D elemental mappingeng
dc.subject.otherfunctional potentialeng
dc.subject.otherGaAs-AlGaAseng
dc.subject.otherholographyeng
dc.subject.otherIII-V nanowireeng
dc.subject.otherquantum well tubeeng
dc.subject.othertomographyeng
dc.titleThree-Dimensional Composition and Electric Potential Mapping of III–V Core–Multishell Nanowires by Correlative STEM and Holographic Tomographyeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIFWD
wgl.subjectChemieger
wgl.typeZeitschriftenartikelger
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