Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)

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dc.bibliographicCitation.firstPage13307eng
dc.bibliographicCitation.journalTitleJournal of materials chemistry : C, Materials for optical and electronic deviceseng
dc.contributor.authorWang, Qiang
dc.contributor.authorNiu, Gang
dc.contributor.authorRoy, Sourav
dc.contributor.authorWang, Yankun
dc.contributor.authorZhang, Yijun
dc.contributor.authorWu, Heping
dc.contributor.authorZhai, Shijie
dc.contributor.authorBai, Wei
dc.contributor.authorShi, Peng
dc.contributor.authorSong, Sannian
dc.contributor.authorSong, Zhitang
dc.contributor.authorXie, Ya-Hong
dc.contributor.authorYe, Zuo-Guang
dc.contributor.authorWenger, Christian
dc.contributor.authorMeng, Xiangjian
dc.contributor.authorRen, Wei
dc.date.accessioned2021-11-08T11:45:30Z
dc.date.available2021-11-08T11:45:30Z
dc.date.issued2019
dc.description.abstractThere was an error in the author list of this published article. The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended. The corrected author list and notations are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers. © The Royal Society of Chemistry 2019.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7208
dc.identifier.urihttps://doi.org/10.34657/6255
dc.language.isoengeng
dc.publisherLondon [u.a.] : RSCeng
dc.relation.doihttps://doi.org/10.1039/c9tc90222h
dc.relation.essn2050-7534
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc540eng
dc.subject.ddc620eng
dc.subject.ddc530eng
dc.subject.othercorrectioneng
dc.titleCorrection: Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)eng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectChemieeng
wgl.typeZeitschriftenartikeleng
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