Advances in group-III-nitride photodetectors
dc.bibliographicCitation.firstPage | 1 | eng |
dc.bibliographicCitation.volume | 4 | eng |
dc.contributor.author | Rivera, C. | |
dc.contributor.author | Pereiro, J. | |
dc.contributor.author | Navarro, A. | |
dc.contributor.author | Muñoz, E. | |
dc.contributor.author | Brandt, O. | |
dc.contributor.author | Grahn, H.T. | |
dc.date.accessioned | 2020-08-12T05:34:50Z | |
dc.date.available | 2020-08-12T05:34:50Z | |
dc.date.issued | 2010 | |
dc.description.abstract | Group-III nitrides are considered to be a strategic technology for the development of ultraviolet photodetectors due to their remarkable properties in terms of spectral selectivity, radiation hardness, and noise. The potential advantages of these materials were initially obscured by their large density of intrinsic defects. The advances were thus associated in general with improvements in material quality. Although technology still also needs improvement, efforts are being intensified in the fabrication of advanced structures for photodetector applications. In particular, this review discusses the recent progress in group-III-nitride photodetectors, emphasizing the work reported on quantum-well-based photodetectors, the use of novel structures exploiting the effect of piezoelectric polarization-induced fields, and polarization-sensitive photodetectors. Furthermore, some ideas can be generalized to other material systems such as ZnO and their related compounds, which exhibit the same crystal structure as group-III nitrides. © Rivera et al.; Licensee Bentham Open. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://doi.org/10.34657/4113 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/5484 | |
dc.language.iso | eng | eng |
dc.publisher | Sharjah [u.a.] : Bentham Open | eng |
dc.relation.doi | https://doi.org/10.2174/1874129001004010001 | |
dc.relation.ispartofseries | Open Electrical and Electronic Engineering Journal 4 (2010) | eng |
dc.relation.issn | 1874-1290 | |
dc.rights.license | CC BY-NC 3.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by-nc/3.0/ | eng |
dc.subject | Electrooptical modulation | eng |
dc.subject | Group-III nitrides | eng |
dc.subject | Photodetectors | eng |
dc.subject | Polarization-sensitive devices | eng |
dc.subject | Quantum wells | eng |
dc.subject | Crystal structure | eng |
dc.subject | II-VI semiconductors | eng |
dc.subject | Nitrides | eng |
dc.subject | Photons | eng |
dc.subject | Polarization | eng |
dc.subject | Semiconductor quantum wells | eng |
dc.subject | Zinc oxide | eng |
dc.subject | Electro-optical modulation | eng |
dc.subject | Group III nitrides | eng |
dc.subject | Piezoelectric polarizations | eng |
dc.subject | Polarization sensitive | eng |
dc.subject | Polarization-sensitive devices | eng |
dc.subject | Spectral selectivity | eng |
dc.subject | Strategic technologies | eng |
dc.subject | Ultra-violet photodetectors | eng |
dc.subject | Photodetectors | eng |
dc.subject.ddc | 620 | eng |
dc.title | Advances in group-III-nitride photodetectors | eng |
dc.type | article | eng |
dc.type | Text | eng |
dcterms.bibliographicCitation.journalTitle | Open Electrical and Electronic Engineering Journal | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | PDI | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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