Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition
dc.bibliographicCitation.firstPage | 050701 | |
dc.bibliographicCitation.issue | 5 | |
dc.bibliographicCitation.journalTitle | APL Materials | eng |
dc.bibliographicCitation.volume | 5 | |
dc.contributor.author | Hilmi, Isom | |
dc.contributor.author | Lotnyk, Andriy | |
dc.contributor.author | Gerlach, Jürgen W. | |
dc.contributor.author | Schumacher, Philipp | |
dc.contributor.author | Rauschenbach, Bernd | |
dc.date.accessioned | 2023-02-28T10:24:19Z | |
dc.date.available | 2023-02-28T10:24:19Z | |
dc.date.issued | 2017 | |
dc.description.abstract | An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/11560 | |
dc.identifier.uri | http://dx.doi.org/10.34657/10594 | |
dc.language.iso | eng | |
dc.publisher | Melville, NY : AIP Publ. | |
dc.relation.doi | https://doi.org/10.1063/1.4983403 | |
dc.relation.essn | 2166-532X | |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0 | |
dc.subject.ddc | 620 | |
dc.subject.ddc | 600 | |
dc.subject.other | Antimony | eng |
dc.subject.other | Chalcogenides | eng |
dc.subject.other | Data storage equipment | eng |
dc.subject.other | Deposition | eng |
dc.subject.other | Deposits | eng |
dc.subject.other | Digital storage | eng |
dc.subject.other | Film growth | eng |
dc.subject.other | High resolution transmission electron microscopy | eng |
dc.subject.other | Inorganic compounds | eng |
dc.subject.other | Pulsed laser deposition | eng |
dc.subject.other | Pulsed lasers | eng |
dc.subject.other | Thin films | eng |
dc.subject.other | Transmission electron microscopy | eng |
dc.subject.other | Van der Waals forces | eng |
dc.subject.other | X ray diffraction | eng |
dc.title | Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | |
wgl.contributor | IOM | |
wgl.subject | Ingenieurwissenschaften | ger |
wgl.type | Zeitschriftenartikel | ger |
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