Spin-polarized electron injection through an Fe/InAs junction

dc.bibliographicCitation.journalTitleJapanese Journal of Applied Physics Part 2 - Express Lettereng
dc.contributor.authorOhno, Hiroshi
dc.contributor.authorYoh, Kanji
dc.contributor.authorSueoko, Kazuhisa
dc.contributor.authorMukasa, Koichi
dc.contributor.authorKawaharazuka, Atsushi
dc.contributor.authorRamsteiner, Manfred E.
dc.date.accessioned2016-03-24T17:38:05Z
dc.date.available2019-06-28T12:38:20Z
dc.date.issued2003
dc.description.abstractWe report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12 % at the temperature of 6.5 K and the external magnetic field of 10 T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tunneling barrier despite the contradictory arguments based on conductivity mismatch at the FM/SC interface.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3969
dc.language.isoengeng
dc.publisherCambridge : arXiveng
dc.relation.urihttp://arxiv.org/abs/cond-mat/0301109
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc530eng
dc.titleSpin-polarized electron injection through an Fe/InAs junctioneng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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