Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3films for vertical device application
dc.bibliographicCitation.firstPage | 052102 | |
dc.bibliographicCitation.issue | 5 | |
dc.bibliographicCitation.volume | 122 | |
dc.contributor.author | Chou, Ta-Shun | |
dc.contributor.author | Seyidov, Palvan | |
dc.contributor.author | Bin Anooz, Saud | |
dc.contributor.author | Grüneberg, Raimund | |
dc.contributor.author | Pietsch, Mike | |
dc.contributor.author | Rehm, Jana | |
dc.contributor.author | Tran, Thi Thuy Vi | |
dc.contributor.author | Tetzner, Kornelius | |
dc.contributor.author | Galazka, Zbigniew | |
dc.contributor.author | Albrecht, Martin | |
dc.contributor.author | Irmscher, Klaus | |
dc.contributor.author | Fiedler, Andreas | |
dc.contributor.author | Popp, Andreas | |
dc.date.accessioned | 2023-06-02T15:03:43Z | |
dc.date.available | 2023-06-02T15:03:43Z | |
dc.date.issued | 2023 | |
dc.description.abstract | This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga2O3 films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A height-adjustable showerhead achieving a close distance to the susceptor (1.5 cm) was demonstrated to be a critical factor in increasing the stability of the Ga wetting layer (or Ga adlayer) on the surface and reducing parasitic particles. A film thickness of up to 3 μm has been achieved while keeping the root mean square below 0.7 nm. Record carrier mobilities of 155 cm2 V-1 s-1 (2.2 μm) and 163 cm2 V-1 s-1 (3 μm) at room temperature were measured for (100) β-Ga2O3 films with carrier concentrations of 5.7 × 1016 and 7.1 × 1016 cm-3, respectively. Analysis of temperature-dependent Hall mobility and carrier concentration data revealed a low background compensating acceptor concentration of 4 × 1015 cm-3. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/12336 | |
dc.identifier.uri | http://dx.doi.org/10.34657/11368 | |
dc.language.iso | eng | |
dc.publisher | Melville, NY : American Inst. of Physics | |
dc.relation.doi | https://doi.org/10.1063/5.0133589 | |
dc.relation.essn | 1077-3118 | |
dc.relation.ispartofseries | Applied Physics Letters 122 (2023), Nr. 5 | eng |
dc.relation.issn | 0003-6951 | |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.subject | Electric power systems | eng |
dc.subject | Gallium compounds | eng |
dc.subject | Hall mobility | eng |
dc.subject | Metallorganic vapor phase epitaxy | eng |
dc.subject | Device application | eng |
dc.subject.ddc | 530 | |
dc.title | Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3films for vertical device application | eng |
dc.type | article | |
dc.type | Text | |
dcterms.bibliographicCitation.journalTitle | Applied Physics Letters | |
tib.accessRights | openAccess | |
wgl.contributor | FBH | |
wgl.contributor | IKZ | |
wgl.subject | Physik | ger |
wgl.type | Zeitschriftenartikel | ger |
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