Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3films for vertical device application

dc.bibliographicCitation.firstPage052102
dc.bibliographicCitation.issue5
dc.bibliographicCitation.volume122
dc.contributor.authorChou, Ta-Shun
dc.contributor.authorSeyidov, Palvan
dc.contributor.authorBin Anooz, Saud
dc.contributor.authorGrüneberg, Raimund
dc.contributor.authorPietsch, Mike
dc.contributor.authorRehm, Jana
dc.contributor.authorTran, Thi Thuy Vi
dc.contributor.authorTetzner, Kornelius
dc.contributor.authorGalazka, Zbigniew
dc.contributor.authorAlbrecht, Martin
dc.contributor.authorIrmscher, Klaus
dc.contributor.authorFiedler, Andreas
dc.contributor.authorPopp, Andreas
dc.date.accessioned2023-06-02T15:03:43Z
dc.date.available2023-06-02T15:03:43Z
dc.date.issued2023
dc.description.abstractThis work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga2O3 films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A height-adjustable showerhead achieving a close distance to the susceptor (1.5 cm) was demonstrated to be a critical factor in increasing the stability of the Ga wetting layer (or Ga adlayer) on the surface and reducing parasitic particles. A film thickness of up to 3 μm has been achieved while keeping the root mean square below 0.7 nm. Record carrier mobilities of 155 cm2 V-1 s-1 (2.2 μm) and 163 cm2 V-1 s-1 (3 μm) at room temperature were measured for (100) β-Ga2O3 films with carrier concentrations of 5.7 × 1016 and 7.1 × 1016 cm-3, respectively. Analysis of temperature-dependent Hall mobility and carrier concentration data revealed a low background compensating acceptor concentration of 4 × 1015 cm-3.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/12336
dc.identifier.urihttp://dx.doi.org/10.34657/11368
dc.language.isoeng
dc.publisherMelville, NY : American Inst. of Physics
dc.relation.doihttps://doi.org/10.1063/5.0133589
dc.relation.essn1077-3118
dc.relation.ispartofseriesApplied Physics Letters 122 (2023), Nr. 5eng
dc.relation.issn0003-6951
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectElectric power systemseng
dc.subjectGallium compoundseng
dc.subjectHall mobilityeng
dc.subjectMetallorganic vapor phase epitaxyeng
dc.subjectDevice applicationeng
dc.subject.ddc530
dc.titleSuppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3films for vertical device applicationeng
dc.typearticle
dc.typeText
dcterms.bibliographicCitation.journalTitleApplied Physics Letters
tib.accessRightsopenAccess
wgl.contributorFBH
wgl.contributorIKZ
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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