Anisotropic electron spin lifetime in (In,Ga)As/GaAs (110) quantum wells

dc.bibliographicCitation.journalTitlePhyical Review Beng
dc.contributor.authorSchreiber, L.
dc.contributor.authorDuda, D.
dc.contributor.authorBeschoten, B.
dc.contributor.authorGüntherodt, G.
dc.contributor.authorSchönher, H.-P.
dc.contributor.authorHerfort, J.
dc.date.accessioned2016-03-24T17:38:01Z
dc.date.available2019-06-28T12:38:11Z
dc.date.issued2007
dc.description.abstractAnisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001)-orientation. From the suppression of spin precession, the ratio of in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio increases with In concentration in agreement with theory, a surprisingly high anisotropy of 480 is observed for the broadest quantum well, when expressed in terms of spin relaxation times.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3947
dc.language.isoengeng
dc.publisherCambridge : arXiveng
dc.relation.urihttp://arxiv.org/abs/cond-mat/0701104
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc530eng
dc.titleAnisotropic electron spin lifetime in (In,Ga)As/GaAs (110) quantum wellseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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