Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation
dc.bibliographicCitation.firstPage | 091105 | eng |
dc.bibliographicCitation.issue | 9 | eng |
dc.bibliographicCitation.journalTitle | APL materials : high impact open access journal in functional materials science | eng |
dc.bibliographicCitation.volume | 10 | eng |
dc.contributor.author | Lee, Ming-Hsun | |
dc.contributor.author | Chou, Ta-Shun | |
dc.contributor.author | Bin Anooz, Saud | |
dc.contributor.author | Galazka, Zbigniew | |
dc.contributor.author | Popp, Andreas | |
dc.contributor.author | Peterson, Rebecca L. | |
dc.date.accessioned | 2022-11-22T14:12:06Z | |
dc.date.available | 2022-11-22T14:12:06Z | |
dc.date.issued | 2022 | |
dc.description.abstract | Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic contact performance for (100)-oriented Ga2O3. A low contact resistance of ∼2.49 × 10−5 Ω·cm2 is achieved at an optimal anneal temperature of ∼420 °C for (100) Ga2O3. This is lower than the widely-used temperature of 470 °C for (010)-oriented Ga2O3. However, drastic degradation of the (100)-oriented contact resistance to ∼1.36 × 10−3 Ω·cm2 is observed when the anneal temperature was increased to 520 °C. Microscopy at the degraded ohmic contact revealed that the reacted Ti–TiOx interfacial layer has greatly expanded to 25–30 nm thickness and GaAu2 inclusions have formed between (310)-Ga2O3 planes and the Ti–TiOx layer. This degraded interface, which corresponds to the deterioration of ohmic contact properties, likely results from excess in-diffusion of Au and out-diffusion of Ga, concurrent with the expansion of the Ti–TiOx layer. These results demonstrate the critical influence of Ga2O3 anisotropy on the optimal post-metallization anneal temperature. Moreover, the observed Ti/Au contact degradation occurs for relatively moderate anneal conditions (520 °C for 1 min in N2), pointing to the urgent necessity of developing alternative metallization schemes for gallium oxide, including the use of Au-free electrodes | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/10405 | |
dc.identifier.uri | http://dx.doi.org/10.34657/9441 | |
dc.language.iso | eng | eng |
dc.publisher | Melville, NY : AIP Publ. | eng |
dc.relation.doi | https://doi.org/10.1063/5.0096245 | |
dc.relation.essn | 2166-532X | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 620 | eng |
dc.subject.ddc | 600 | eng |
dc.subject.other | Binary alloys | eng |
dc.subject.other | Contact resistance | eng |
dc.subject.other | Deterioration | eng |
dc.subject.other | Electric contactors | eng |
dc.subject.other | Gallium compounds | eng |
dc.subject.other | Metallizing | eng |
dc.subject.other | Metals | eng |
dc.title | Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IKZ | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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