Toward Reliable Multi-Level Operation in RRAM Arrays: Improving Post-Algorithm Stability and Assessing Endurance/Data Retention

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Date
2019
Volume
7
Issue
Journal
IEEE Journal of the Electron Devices Society
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Publisher
Piscataway : Institute of Electrical and Electronics Engineers Inc.
Abstract

Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays is currently a challenging task due to several threats like the post-algorithm instability occurring after the levels placement, the limited endurance, and the poor data retention capabilities at high temperature. In this paper, we introduced a multi-level variation of the state-of-the-art incremental step pulse with verify algorithm (M-ISPVA) to improve the stability of the low resistive state levels. This algorithm introduces for the first time the proper combination of current compliance control and program/verify paradigms. The validation of the algorithm for forming and set operations has been performed on 4-kbit RRAM arrays. In addition, we assessed the endurance and the high temperature multi-level retention capabilities after the algorithm application proving a 1 k switching cycles stability and a ten years retention target with temperatures below 100 °C.

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CC BY 4.0 Unported