High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

dc.bibliographicCitation.issue8eng
dc.bibliographicCitation.journalTitleAIP Advanceseng
dc.bibliographicCitation.volume6
dc.contributor.authorYeh, Chia-Pin
dc.contributor.authorLisker, Marco
dc.contributor.authorKalkofen, Bodo
dc.contributor.authorBurte, Edmund P.
dc.date.accessioned2018-04-27T03:24:04Z
dc.date.available2019-06-28T12:39:44Z
dc.date.issued2016
dc.description.abstractReactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1544
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4333
dc.language.isoengeng
dc.publisherNew York : American Institute of Physicseng
dc.relation.doihttps://doi.org/10.1063/1.4961447
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.otherFerroelectric materialseng
dc.subject.otherAluminiumeng
dc.subject.otherPolymerseng
dc.subject.otherPlasma etchingeng
dc.subject.otherCapacitorseng
dc.subject.otherIridiumeng
dc.subject.otherElectron beam depositioneng
dc.subject.otherPlasma temperatureeng
dc.titleHigh temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasmaeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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