Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma

dc.bibliographicCitation.firstPage465204eng
dc.bibliographicCitation.issue46eng
dc.bibliographicCitation.journalTitleJournal of physics : D, Applied physicseng
dc.bibliographicCitation.volume53eng
dc.contributor.authorSmith, Gregory J.
dc.contributor.authorEllis, James
dc.contributor.authorMoussaoui, Roba
dc.contributor.authorPardanaud, Cédric
dc.contributor.authorMartin, Céline
dc.contributor.authorAchard, Jocelyn
dc.contributor.authorIssaoui, Riadh
dc.contributor.authorGans, Timo
dc.contributor.authorDedrick, James P.
dc.contributor.authorCartry, Gilles
dc.date.accessioned2021-11-17T06:56:54Z
dc.date.available2021-11-17T06:56:54Z
dc.date.issued2020
dc.description.abstractThe production of negative ions is of significant interest for applications including mass spectrometry, particle acceleration, material surface processing, and neutral beam injection for magnetic confinement fusion. Methods to improve the efficiency of the surface production of negative ions, without the use of low work function metals, are of interest for mitigating the complex engineering challenges these materials introduce. In this study we investigate the production of negative ions by doping diamond with nitrogen. Negatively biased (-20 V or-130 V), nitrogen doped micro-crystalline diamond films are introduced to a low pressure deuterium plasma (helicon source operated in capacitive mode, 2 Pa, 26 W) and negative ion energy distribution functions are measured via mass spectrometry with respect to the surface temperature (30 °C to 750 °C) and dopant concentration. The results suggest that nitrogen doping has little influence on the yield when the sample is biased at-130 V, but when a relatively small bias voltage of-20 V is applied the yield is increased by a factor of 2 above that of un-doped diamond when its temperature reaches 550 °C. The doping of diamond with nitrogen is a new method for controlling the surface production of negative ions, which continues to be of significant interest for a wide variety of practical applications. © 2020 The Author(s). Published by IOP Publishing Ltd.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7320
dc.identifier.urihttps://doi.org/10.34657/6367
dc.language.isoengeng
dc.publisherBristol : IOP Publ.eng
dc.relation.doihttps://doi.org/10.1088/1361-6463/aba6b6
dc.relation.essn1361-6463
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.otherD2eng
dc.subject.otherdiamondeng
dc.subject.othernegative-ion surface productioneng
dc.subject.otherplasmaeng
dc.titleEnhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasmaeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorINPeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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