Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy

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dc.bibliographicCitation.journalTitleNew Journal of Physicseng
dc.bibliographicCitation.volume9
dc.contributor.authorLuna, E.
dc.contributor.authorTrampert, A.
dc.contributor.authorPavelescu, E.-M.
dc.contributor.authorPessa, M.
dc.date.accessioned2019-03-22T03:00:42Z
dc.date.available2019-06-28T12:39:06Z
dc.date.issued2007
dc.description.abstractTransmission electron microscopy (TEM) is used to determine the composition of quaternary (Ga,In)(N,As) quantum wells (QWs). Through a combined analysis of the chemically sensitive (002) dark-field (DF) images and the lattice-resolving high-resolution TEM images, the local distributions of nitrogen and indium in the growth direction are determined. In particular, we are able to directly detect the existence of indium segregation in (Ga,In)(N,As) QWs. A comparison with the indium distribution profile in the nitrogen-free (In,Ga)As QWs, grown under similar conditions, revealed that incorporating N into the alloy enhanced indium segregation.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1590
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4188
dc.language.isoengeng
dc.publisherMilton Park : Taylor & Franciseng
dc.relation.doihttps://doi.org/10.1088/1367-2630/9/11/405
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc530eng
dc.titleNitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxyeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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