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Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study
| dc.bibliographicCitation.journalTitle | Microscopy and Microanalysis | eng |
| dc.contributor.author | Luna, E. | |
| dc.contributor.author | Grandal, J. | |
| dc.contributor.author | Gallardo, E. | |
| dc.contributor.author | Calleja, J.M. | |
| dc.contributor.author | Sánchez-García, M.A. | |
| dc.contributor.author | Calleja, E. | |
| dc.contributor.author | Trampert, A. | |
| dc.date.accessioned | 2016-03-24T17:37:06Z | |
| dc.date.available | 2019-06-28T12:39:24Z | |
| dc.date.issued | 2013 | |
| dc.description.abstract | We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2-3 nm thick) around the InN NWs. The shell layer is composed of bcc-In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] | eng |
| dc.description.abstract | InN [0001] and In2O3 <110> | eng |
| dc.description.abstract | InN <11-20>. | eng |
| dc.description.version | publishedVersion | eng |
| dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/4261 | |
| dc.language.iso | eng | eng |
| dc.publisher | Cambridge : arXiv | eng |
| dc.relation.uri | http://arxiv.org/abs/1312.4809 | |
| dc.rights.license | This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties. | eng |
| dc.rights.license | Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. | ger |
| dc.subject.ddc | 530 | eng |
| dc.subject.other | transmission electron microscopy | eng |
| dc.subject.other | plan-view TEM | eng |
| dc.subject.other | nanowires | eng |
| dc.subject.other | III–V semiconductors | eng |
| dc.subject.other | InN | eng |
| dc.subject.other | molecular beam epitaxy | eng |
| dc.title | Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study | eng |
| dc.type | Article | eng |
| dc.type | Text | eng |
| tib.accessRights | openAccess | eng |
| wgl.contributor | PDI | eng |
| wgl.subject | Physik | eng |
| wgl.type | Zeitschriftenartikel | eng |