Heteroepitaxy of group IV materials for future device application

dc.bibliographicCitation.firstPageSC0805
dc.bibliographicCitation.issueSC
dc.bibliographicCitation.journalTitleJapanese journal of applied physics : JJAPeng
dc.bibliographicCitation.volume62
dc.contributor.authorYamamoto, Yuji
dc.contributor.authorWen, Wei-Chen
dc.contributor.authorTillack, Bernd
dc.date.accessioned2023-06-02T15:03:42Z
dc.date.available2023-06-02T15:03:42Z
dc.date.issued2023
dc.description.abstractHeteroepitxy of group IV materials (Si, SiGe, and Ge) has great potential for boosting Si-based novel device performance because of the possibility for strain, band gap/Fermi-level engineering, and applying emerging artificial materials such as a superlattice (SL) and nanodots. In order to control group IV heteroepitaxy processes, strain, interface, and surface energies are very essential parameters. They affect dislocation formation, interface steepness, reflow of deposited layers, and also surface reaction itself during the growth. Therefore, process control and crystallinity management of SiGe heteroepitaxy are difficult especially in the case of high Ge concentrations. In this paper, we review our results of abrupt SiGe/Si interface fabrication by introducing C-delta layers and the influence of strain on the surface reaction of SiGe. Three-dimensional self-ordered SiGe and Ge nanodot fabrication by proactively using strain and surface energies by depositing SiGe/Si and Ge/SiGe SL are also reviewed.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/12325
dc.identifier.urihttp://dx.doi.org/10.34657/11357
dc.language.isoeng
dc.publisherBristol : IOP Publ.
dc.relation.doihttps://doi.org/10.35848/1347-4065/acb1a6
dc.relation.essn1347-4065
dc.relation.issn0021-4922
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.subject.ddc530
dc.subject.otherchemical vapor depositioneng
dc.subject.othergroup IVeng
dc.subject.otherhetroepitaxyeng
dc.subject.otherrelaxationeng
dc.subject.otherSieng
dc.subject.otherSiGeeng
dc.subject.otherstraineng
dc.titleHeteroepitaxy of group IV materials for future device applicationeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccess
wgl.contributorIHP
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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