Bicrystalline grain boundary junctions of Co-doped and P-doped Ba-122 thin films

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dc.bibliographicCitation.issuePart 1
dc.bibliographicCitation.volume507
dc.contributor.authorSchmidt, S.
dc.contributor.authorDöring, S.
dc.contributor.authorSchmidl, F.
dc.contributor.authorKurth, F.
dc.contributor.authorIida, K.
dc.contributor.authorHolzapfel, B.
dc.contributor.authorKawaguchi, T.
dc.contributor.authorMori, Y.
dc.contributor.authorIkuta, H.
dc.contributor.authorSeidel, P.
dc.date.accessioned2018-06-02T04:40:17Z
dc.date.available2019-06-28T12:39:51Z
dc.date.issued2014
dc.description.abstractWe prepared GB junctions of Ba(Fe0.9Co0.1)2As2 thin films on bicrystalline [00 l]-tilt SrTiO3 substrates. The junctions show clear Josephson effects. Electrical characterization shows asymmetric I-V characteristics which can be described within the resistively shunted junction (RSJ) model. A large excess current is observed. Their formal ICRN product is 20.2 μV at 4.2 K, which is decreased to 6.5 μV when taking Iex into account. Fabrication methods to increase this value are discussed. Additionally, measurements on GB junctions of BaFe2(As0.66P0.34)2 thin films on LSAT bicrystalline substrates are shown. Their symmetric RSJ/flux flow-behavior exhibits a formal ICRN product of 45 μV, whereas the excess corrected value is ll μV.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1434
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4351
dc.language.isoengeng
dc.publisherMilton Park : Taylor & Franciseng
dc.relation.doihttps://doi.org/10.1088/1742-6596/507/1/012046
dc.relation.ispartofseriesJournal of Physics: Conference Series, Volume 507, Issue Part 1eng
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subjectCobalteng
dc.subjectGrain boundarieseng
dc.subjectSemiconductor junctionseng
dc.subject.classificationKonferenzschriftger
dc.subject.ddc530eng
dc.titleBicrystalline grain boundary junctions of Co-doped and P-doped Ba-122 thin filmseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleJournal of Physics: Conference Serieseng
tib.accessRightsopenAccesseng
wgl.contributorIFWDeng
wgl.subjectPhysikeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeKonferenzbeitrageng
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