A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

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dc.bibliographicCitation.firstPageP11008eng
dc.bibliographicCitation.issue11eng
dc.bibliographicCitation.journalTitleJournal of Instrumentationeng
dc.bibliographicCitation.volume14eng
dc.contributor.authorIacobucci, G.
dc.contributor.authorCardarelli, R.
dc.contributor.authorDébieux, S.
dc.contributor.authorDi Bello, F.A.
dc.contributor.authorFavre, Y.
dc.contributor.authorHayakawa, D.
dc.contributor.authorKaynak, M.
dc.contributor.authorNessi, M.
dc.contributor.authorPaolozzi, L.
dc.contributor.authorRücker, H.
dc.contributor.authorSultan, D.M.S.
dc.contributor.authorValerio, P.
dc.date.accessioned2021-11-16T10:42:16Z
dc.date.available2021-11-16T10:42:16Z
dc.date.issued2019
dc.description.abstractA monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 µm and 130 µm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e- for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. © 2019 CERN.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7304
dc.identifier.urihttps://doi.org/10.34657/6351
dc.language.isoengeng
dc.publisherLondon : Inst. of Physicseng
dc.relation.doihttps://doi.org/10.1088/1748-0221/14/11/P11008
dc.relation.essn1748-0221
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc610eng
dc.subject.otherInstrumentation and methods for time-of-flight (TOF) spectroscopyeng
dc.subject.otherParticle tracking detectors (Solid-state detectors)eng
dc.subject.otherPixelated detectors and associated VLSI electronicseng
dc.subject.otherSolid state detectorseng
dc.titleA 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technologyeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectMedizin, Gesundheiteng
wgl.typeZeitschriftenartikeleng
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