Current Status of Carbon‐Related Defect Luminescence in GaN

dc.bibliographicCitation.firstPage2100235eng
dc.bibliographicCitation.issue20eng
dc.bibliographicCitation.journalTitlePhysica status solidi : A, Applied researcheng
dc.bibliographicCitation.volume218eng
dc.contributor.authorZimmermann, Friederike
dc.contributor.authorBeyer, Jan
dc.contributor.authorRöder, Christian
dc.contributor.authorBeyer, Franziska C.
dc.contributor.authorRichter, Eberhard
dc.contributor.authorIrmscher, Klaus
dc.contributor.authorHeitmann, Johannes
dc.date.accessioned2022-04-05T09:15:34Z
dc.date.available2022-04-05T09:15:34Z
dc.date.issued2021
dc.description.abstractHighly insulating layers are a prerequisite for gallium nitride (GaN)-based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact on the optical and electrical properties of GaN has been widely debated in the scientific community. For further improvement of device performance, a better understanding of the role of related defects is essential. To study optically active point defects, photoluminescence is one of the most frequently used experimental characterization techniques. Herein, the main recent advances in the attribution of carbon-related photoluminescence bands are reviewed, which were enabled by the interplay of a refinement of growth and characterization techniques and state-of-the-art first-principles calculations developed during the last decade. The predicted electronic structures of isolated carbon defects and selected carbon-impurity complexes are compared to experimental results. Taking into account both of these, a comprehensive overview on the present state of interpretation of carbon-related broad luminescence bands in bulk GaN is presented.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8577
dc.identifier.urihttps://doi.org/10.34657/7615
dc.language.isoengeng
dc.publisherWeinheim : Wiley-VCHeng
dc.relation.doihttps://doi.org/10.1002/pssa.202100235
dc.relation.essn1862-6319
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.othercarboneng
dc.subject.othercarbon complexeseng
dc.subject.otherGaNeng
dc.subject.otherluminescenceeng
dc.titleCurrent Status of Carbon‐Related Defect Luminescence in GaNeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorFBHeng
wgl.contributorIKZeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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