Phase change thin films for non-volatile memory applications

dc.bibliographicCitation.firstPage3836eng
dc.bibliographicCitation.issue10eng
dc.bibliographicCitation.journalTitleNanoscale advanceseng
dc.bibliographicCitation.lastPage3857eng
dc.bibliographicCitation.volume1eng
dc.contributor.authorLotnyk, A.
dc.contributor.authorBehrens, M.
dc.contributor.authorRauschenbach, B.
dc.date.accessioned2021-11-25T13:31:22Z
dc.date.available2021-11-25T13:31:22Z
dc.date.issued2019
dc.description.abstractThe rapid development of Internet of Things devices requires real time processing of a huge amount of digital data, creating a new demand for computing technology. Phase change memory technology based on chalcogenide phase change materials meets many requirements of the emerging memory applications since it is fast, scalable and non-volatile. In addition, phase change memory offers multilevel data storage and can be applied both in neuro-inspired and all-photonic in-memory computing. Furthermore, phase change alloys represent an outstanding class of functional materials having a tremendous variety of industrially relevant characteristics and exceptional material properties. Many efforts have been devoted to understanding these properties with the particular aim to design universal memory. This paper reviews materials science aspects of chalcogenide-based phase change thin films relevant for non-volatile memory applications. Particular emphasis is put on local structure, control of disorder and its impact on material properties, order-disorder transitions and interfacial transformations. © 2019 The Royal Society of Chemistry.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7499
dc.identifier.urihttps://doi.org/10.34657/6546
dc.language.isoengeng
dc.publisherCambridge : Royal Society of Chemistryeng
dc.relation.doihttps://doi.org/10.1039/c9na00366e
dc.relation.essn2516-0230
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc540eng
dc.subject.otherInternet of Thingseng
dc.subject.otherchalcogenide phase change materialseng
dc.subject.othernon-volatile memory applicationeng
dc.titlePhase change thin films for non-volatile memory applicationseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIOMeng
wgl.subjectChemieeng
wgl.typeZeitschriftenartikeleng
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