Modeling of quantum dot lasers with microscopic treatment of Coulomb effects

We present a spatially resolved semiclassical model for the simulation of semiconductor quantum-dot lasers including a multi-species description for the carriers along the optical active region. The model links microscopic determined quantities like scattering rates and dephasing times, that essentially depend via Coulomb interaction on the carrier densities, with macroscopic transport equations and equations for the optical field.78A60 68U2078A60 68U20

URI

https://doi.org/10.34657/2693
https://oa.tib.eu/renate/handle/123456789/2546

Citation

Koprucki, T., Wilms, A., Knorr, A., & Bandelow, U. (2010). Modeling of quantum dot lasers with microscopic treatment of Coulomb effects. Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.

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