Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: Evidences for light localization effect

dc.bibliographicCitation.firstPage524eng
dc.bibliographicCitation.journalTitleNanoscale Research Letterseng
dc.bibliographicCitation.volume7eng
dc.contributor.authorOsminkina, L.A.
dc.contributor.authorGonchar, K.A.
dc.contributor.authorMarshov, V.S.
dc.contributor.authorBunkov, K.V.
dc.contributor.authorPetrov, D.V.
dc.contributor.authorGolovan, L.A.
dc.contributor.authorTalkenberg, F.
dc.contributor.authorSivakov, V.A.
dc.contributor.authorTimoshenko, V.Y.
dc.date.accessioned2020-09-29T09:09:38Z
dc.date.available2020-09-29T09:09:38Z
dc.date.issued2012
dc.description.abstractWe study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1-25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of 'black silicon', which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://doi.org/10.34657/4387
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/5758
dc.language.isoengeng
dc.publisherNew York, NY [u.a.] : Springereng
dc.relation.doihttps://doi.org/10.1186/1556-276X-7-524
dc.relation.issn1931-7573
dc.rights.licenseCC BY 2.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/2.0/eng
dc.subject.ddc620eng
dc.subject.otherBlack siliconeng
dc.subject.otherLight localizationeng
dc.subject.otherRaman scatteringeng
dc.subject.otherSilicon nanowireseng
dc.subject.otherEtchingeng
dc.subject.otherHydrofluoric acideng
dc.subject.otherNanowireseng
dc.subject.otherRaman scatteringeng
dc.subject.otherReflectioneng
dc.subject.otherRefractive indexeng
dc.subject.otherSiliconeng
dc.subject.otherSilicon compoundseng
dc.subject.otherSubstrateseng
dc.subject.otherBlack siliconeng
dc.subject.otherEffective Medium Approximationeng
dc.subject.otherEffective refractive indexeng
dc.subject.otherLight localizationeng
dc.subject.otherLight-matter interactionseng
dc.subject.otherMetal-assisted chemical etchingeng
dc.subject.otherRaman scattering intensityeng
dc.subject.otherSilicon nanowireseng
dc.subject.otherNitrogen compoundseng
dc.titleOptical properties of silicon nanowire arrays formed by metal-assisted chemical etching: Evidences for light localization effecteng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIPHTeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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