Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes
dc.bibliographicCitation.firstPage | 594 | eng |
dc.bibliographicCitation.journalTitle | Nanoscale Research Letters | eng |
dc.bibliographicCitation.volume | 7 | eng |
dc.contributor.author | Rodriguez, R.D. | |
dc.contributor.author | Sheremet, E. | |
dc.contributor.author | Thurmer, D.J. | |
dc.contributor.author | Lehmann, D. | |
dc.contributor.author | Gordan, O.D. | |
dc.contributor.author | Seidel, F. | |
dc.contributor.author | Milekhin, A. | |
dc.contributor.author | Schmidt, O.G. | |
dc.contributor.author | Hietschold, M. | |
dc.contributor.author | Zahn, D.R.T. | |
dc.date.accessioned | 2020-09-29T09:09:41Z | |
dc.date.available | 2020-09-29T09:09:41Z | |
dc.date.issued | 2012 | |
dc.description.abstract | Large arrays of multifunctional rolled-up semiconductors can be mass-produced with precisely controlled size and composition, making them of great technological interest for micro- and nano-scale device fabrication. The microtube behavior at different temperatures is a key factor towards further engineering their functionality, as well as for characterizing strain, defects, and temperature-dependent properties of the structures. For this purpose, we probe optical phonons of GaAs/InGaAs rolled-up microtubes using Raman spectroscopy on defect-rich (faulty) and defect-free microtubes. The microtubes are fabricated by selectively etching an AlAs sacrificial layer in order to release the strained InGaAs/GaAs bilayer, all grown by molecular beam epitaxy. Pristine microtubes show homogeneity of the GaAs and InGaAs peak positions and intensities along the tube, which indicates a defect-free rolling up process, while for a cone-like microtube, a downward shift of the GaAs LO phonon peak along the cone is observed. Formation of other type of defects, including partially unfolded microtubes, can also be related to a high Raman intensity of the TO phonon in GaAs. We argue that the appearance of the TO phonon mode is a consequence of further relaxation of the selection rules due to the defects on the tubes, which makes this phonon useful for failure detection/prediction in such rolled up systems. In order to systematically characterize the temperature stability of the rolled up microtubes, Raman spectra were acquired as a function of sample temperature up to 300°C. The reversibility of the changes in the Raman spectra of the tubes within this temperature range is demonstrated. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://doi.org/10.34657/4405 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/5776 | |
dc.language.iso | eng | eng |
dc.publisher | New York, NY [u.a.] : Springer | eng |
dc.relation.doi | https://doi.org/10.1186/1556-276X-7-594 | |
dc.relation.issn | 1931-7573 | |
dc.rights.license | CC BY 2.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/2.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | Dependent Raman spectroscopy | eng |
dc.subject.other | Gallium arsenide | eng |
dc.subject.other | Gallium arsenide TO phonon | eng |
dc.subject.other | Microtubes | eng |
dc.subject.other | Raman imaging | eng |
dc.subject.other | Raman spectroscopy defects | eng |
dc.subject.other | Rolled up tubes | eng |
dc.subject.other | Strain imaging | eng |
dc.subject.other | Aluminum arsenide | eng |
dc.subject.other | Defects | eng |
dc.subject.other | Etching | eng |
dc.subject.other | Gallium arsenide | eng |
dc.subject.other | Molecular beam epitaxy | eng |
dc.subject.other | Nanotechnology | eng |
dc.subject.other | Phonons | eng |
dc.subject.other | Raman scattering | eng |
dc.subject.other | Raman spectroscopy | eng |
dc.subject.other | Semiconducting gallium | eng |
dc.subject.other | Semiconducting indium | eng |
dc.subject.other | Semiconducting indium gallium arsenide | eng |
dc.subject.other | Semiconductor alloys | eng |
dc.subject.other | Micro-tubes | eng |
dc.subject.other | Raman imaging | eng |
dc.subject.other | Sample temperature | eng |
dc.subject.other | Selectively etchings | eng |
dc.subject.other | Strain imaging | eng |
dc.subject.other | Temperature stability | eng |
dc.subject.other | Temperature-dependent properties | eng |
dc.subject.other | Temperature-dependent raman | eng |
dc.subject.other | III-V semiconductors | eng |
dc.title | Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IFWD | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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