Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
dc.bibliographicCitation.issue | 8 | |
dc.bibliographicCitation.journalTitle | Semiconductor Science and Technology | eng |
dc.bibliographicCitation.volume | 31 | |
dc.contributor.author | Pristovsek, Markus | |
dc.contributor.author | Han, Yisong | |
dc.contributor.author | Zhu, Tongtong | |
dc.contributor.author | Oehler, Fabrice | |
dc.contributor.author | Tang, Fengzai | |
dc.contributor.author | Oliver, Rachel A. | |
dc.contributor.author | Humphreys, Colin J. | |
dc.contributor.author | Tytko, Darius | |
dc.contributor.author | Choi, Pyuck-Pa | |
dc.contributor.author | Raabe, Dierk | |
dc.contributor.author | Brunner, Frank | |
dc.contributor.author | Weyers, Markus | |
dc.date.accessioned | 2018-02-13T21:58:42Z | |
dc.date.available | 2019-06-28T12:38:21Z | |
dc.date.issued | 2016 | |
dc.description.abstract | We benchmarked growth, microstructure and photo luminescence (PL) of (112-2) InGaN quantum wells (QWs) against (0001) and (112-0). In incorporation, growth rate and the critical thickness of (112-2) QWs are slightly lower than (0001) QWs, while the In incorporation on (112-0) is reduced by a factor of three. A small step-bunching causes slight fluctuations of the emission wavelength. Transmission electron microscopy as well as atom probe tomography (APT) found very flat interfaces with little In segregation even for 20% In content. APT frequency distribution analysis revealed some deviation from a random InGaN alloy, but not as severe as for (112-0). The slight deviation of (112-2) QWs from an ideal random alloy did not broaden the 300 K PL, the line widths were similar for (112-2) and (0001) while (112-0) QWs were broader. Despite the high structural quality and narrow PL, the integrated PL signal at 300 K was about 4 lower on (112-2) and more than 10 lower on (112-0). | eng |
dc.description.version | publishedVersion | eng |
dc.format | application/pdf | |
dc.identifier.uri | https://doi.org/10.34657/1656 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/3985 | |
dc.language.iso | eng | eng |
dc.publisher | Milton Park : Taylor & Francis | eng |
dc.relation.doi | https://doi.org/10.1088/0268-1242/31/8/085007 | |
dc.rights.license | CC BY 3.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | atom probe tomography | eng |
dc.subject.other | InGaN | eng |
dc.subject.other | optical properties | eng |
dc.subject.other | quantum well | eng |
dc.subject.other | semi-polar | eng |
dc.subject.other | step-bunching | eng |
dc.title | Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0) | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | FBH | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- Pristovsek_2016_Semicond._Sci._Technol._31_085007.pdf
- Size:
- 2.78 MB
- Format:
- Adobe Portable Document Format
- Description: