Maximizing transfection efficiency of vertically aligned silicon nanowire arrays

dc.bibliographicCitation.issue46
dc.bibliographicCitation.volume25
dc.contributor.authorElnathan, Roey
dc.contributor.authorDelalat, Bahman
dc.contributor.authorBrodoceanu, Daniel
dc.contributor.authorAlhoud, Hashim
dc.contributor.authorHarding, Frances J.
dc.contributor.authorBuehler, Katrin
dc.contributor.authorNelson, Adrienne
dc.contributor.authorIsa, Lucio
dc.contributor.authorKraus, Tobias
dc.contributor.authorVoelcker, Nicolas H.
dc.date.accessioned2018-11-27T13:55:22Z
dc.date.available2019-06-28T13:59:45Z
dc.date.issued2015
dc.description.abstractVertically aligned silicon nanowire (VA‐SiNW) arrays are emerging as a powerful new tool for gene delivery by means of mechanical transfection. In order to utilize this tool efficiently, uncertainties around the required design parameters need to be removed. Here, a combination of nanosphere lithography and templated metal‐assisted wet chemical etching is used to fabricate VA‐SiNW arrays with a range of diameters, heights, and densities. This fabrication strategy allows identification of critical parameters of surface topography and consequently the design of SiNW arrays that deliver plasmid with high transfection efficiency into a diverse range of human cells whilst maintaining high cell viability. These results illuminate the cell‐materials interactions that mediate VA‐SiNW transfection and have the potential to transform gene therapy and underpin future treatment modalities.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/5096
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4646
dc.language.isoengeng
dc.publisherHoboken, NJ : Wileyeng
dc.relation.doihttps://doi.org/10.1002/adfm.201503465
dc.relation.ispartofseriesAdvanced Functional Materials, Volume 25, Issue 46eng
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc620eng
dc.titleMaximizing transfection efficiency of vertically aligned silicon nanowire arrayseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleAdvanced Functional Materialseng
tib.accessRightsopenAccesseng
wgl.contributorINMeng
wgl.subjectIngenieurwissenschafteneng
wgl.subjectUmweltwissenschafteneng
wgl.typeZeitschriftenartikeleng
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