Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers

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Date
2010
Volume
1506
Issue
Journal
Series Titel
WIAS Preprints
Book Title
Publisher
Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik
Link to publishers version
Abstract

We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.

Description
Keywords
Quantum dots, semiconductor laser, saturable absorber, mode-locking, optical mode
Citation
Radziunas, M., Vladimirov, A. G., & Viktorov, E. A. (2010). Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers (Vol. 1506). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.
License
This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.
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