Epitaxial stannate pyrochlore thin films: Limitations of cation stoichiometry and electron doping

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dc.bibliographicCitation.firstPage051113eng
dc.bibliographicCitation.issue5eng
dc.bibliographicCitation.volume9eng
dc.contributor.authorHensling, Felix V. E.
dc.contributor.authorDahliah, Diana
dc.contributor.authorDulal, Prabin
dc.contributor.authorSingleton, Patrick
dc.contributor.authorSun, Jiaxin
dc.contributor.authorSchubert, Jürgen
dc.contributor.authorPaik, Hanjong
dc.contributor.authorSubedi, Indra
dc.contributor.authorSubedi, Biwas
dc.contributor.authorRignanese, Gian-Marco
dc.contributor.authorPodraza, Nikolas J.
dc.contributor.authorHautier, Geoffroy
dc.contributor.authorSchlom, Darrell G.
dc.date.accessioned2022-02-22T07:59:31Z
dc.date.available2022-02-22T07:59:31Z
dc.date.issued2021
dc.description.abstractWe have studied the growth of epitaxial films of stannate pyrochlores with a general formula A2Sn2O7 (A = La and Y) and find that it is possible to incorporate ∼25% excess of the A-site constituent; in contrast, any tin excess is expelled. We unravel the defect chemistry, allowing for the incorporation of excess A-site species and the mechanism behind the tin expulsion. An A-site surplus is manifested by a shift in the film diffraction peaks, and the expulsion of tin is apparent from the surface morphology of the film. In an attempt to increase La2Sn2O7 conductivity through n-type doping, substantial quantities of tin have been substituted by antimony while maintaining good film quality. The sample remained insulating as explained by first-principles computations, showing that both the oxygen vacancy and antimony-on-tin substitutional defects are deep. Similar conclusions are drawn on Y2Sn2O7. An alternative n-type dopant, fluorine on oxygen, is shallow according to computations and more likely to lead to electrical conductivity. The bandgaps of stoichiometric La2Sn2O7 and Y2Sn2O7 films were determined by spectroscopic ellipsometry to be 4.2 eV and 4.48 eV, respectively. © 2021 Author(s).eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8039
dc.identifier.urihttps://doi.org/10.34657/7080
dc.language.isoengeng
dc.publisherMelville, NY : AIP Publishingeng
dc.relation.doihttps://doi.org/10.1063/5.0049334
dc.relation.essn2166-532X
dc.relation.ispartofseriesAPL Materials 9 (2021), Nr. 5eng
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectAntimonyeng
dc.subjectEpitaxial filmseng
dc.subjectLanthanum compoundseng
dc.subjectMorphologyeng
dc.subjectOxygeneng
dc.subjectSemiconductor dopingeng
dc.subjectSpectroscopic ellipsometryeng
dc.subjectSurface morphologyeng
dc.subjectTin compoundseng
dc.subjectCation stoichiometryeng
dc.subjectDefect chemistryeng
dc.subjectDiffraction peakseng
dc.subjectElectrical conductivityeng
dc.subjectFirst principleseng
dc.subjectGeneral formulaseng
dc.subjectStannate pyrochloreseng
dc.subjectSubstitutional defectseng
dc.subjectYttrium compoundseng
dc.subject.ddc620eng
dc.subject.ddc600eng
dc.titleEpitaxial stannate pyrochlore thin films: Limitations of cation stoichiometry and electron dopingeng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleAPL Materialseng
tib.accessRightsopenAccesseng
wgl.contributorIKZeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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