Highly linear fundamental up-converter in InP DHBT technology for W-band applications
dc.bibliographicCitation.firstPage | 2513 | eng |
dc.bibliographicCitation.issue | 7 | eng |
dc.bibliographicCitation.journalTitle | Microwave and optical technology letters | eng |
dc.bibliographicCitation.lastPage | 2517 | eng |
dc.bibliographicCitation.volume | 62 | eng |
dc.contributor.author | Hossain, Maruf | |
dc.contributor.author | Stoppel, Dimitri | |
dc.contributor.author | Boppel, Sebastian | |
dc.contributor.author | Heinrich, Wolfgang | |
dc.contributor.author | Krozer, Viktor | |
dc.date.accessioned | 2021-11-24T14:37:16Z | |
dc.date.available | 2021-11-24T14:37:16Z | |
dc.date.issued | 2020 | |
dc.description.abstract | A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 ± 1 dB within the frequency from 82 to 95 GHz with a saturated output power of -1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW. © 2020 The Authors. Microwave and Optical Technology Letters published by Wiley Periodicals, Inc. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/7453 | |
dc.identifier.uri | https://doi.org/10.34657/6500 | |
dc.language.iso | eng | eng |
dc.publisher | New York, NY [u.a.] : Wiley | eng |
dc.relation.doi | https://doi.org/10.1002/mop.32357 | |
dc.relation.essn | 1098-2760 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 620 | eng |
dc.subject.other | Gilbert cell (GC) mixer | eng |
dc.subject.other | indium phosphide double heterojunction bipolar transistor (DHBT) | eng |
dc.subject.other | Local oscillator (LO) | eng |
dc.subject.other | lower side band (LSB) | eng |
dc.subject.other | single sideband (SSB) | eng |
dc.subject.other | transferred-substrate (TS) process | eng |
dc.subject.other | upper side band (USB) | eng |
dc.title | Highly linear fundamental up-converter in InP DHBT technology for W-band applications | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | FBH | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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