Highly linear fundamental up-converter in InP DHBT technology for W-band applications

dc.bibliographicCitation.firstPage2513eng
dc.bibliographicCitation.issue7eng
dc.bibliographicCitation.journalTitleMicrowave and optical technology letterseng
dc.bibliographicCitation.lastPage2517eng
dc.bibliographicCitation.volume62eng
dc.contributor.authorHossain, Maruf
dc.contributor.authorStoppel, Dimitri
dc.contributor.authorBoppel, Sebastian
dc.contributor.authorHeinrich, Wolfgang
dc.contributor.authorKrozer, Viktor
dc.date.accessioned2021-11-24T14:37:16Z
dc.date.available2021-11-24T14:37:16Z
dc.date.issued2020
dc.description.abstractA fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 ± 1 dB within the frequency from 82 to 95 GHz with a saturated output power of -1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW. © 2020 The Authors. Microwave and Optical Technology Letters published by Wiley Periodicals, Inc.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7453
dc.identifier.urihttps://doi.org/10.34657/6500
dc.language.isoengeng
dc.publisherNew York, NY [u.a.] : Wileyeng
dc.relation.doihttps://doi.org/10.1002/mop.32357
dc.relation.essn1098-2760
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc620eng
dc.subject.otherGilbert cell (GC) mixereng
dc.subject.otherindium phosphide double heterojunction bipolar transistor (DHBT)eng
dc.subject.otherLocal oscillator (LO)eng
dc.subject.otherlower side band (LSB)eng
dc.subject.othersingle sideband (SSB)eng
dc.subject.othertransferred-substrate (TS) processeng
dc.subject.otherupper side band (USB)eng
dc.titleHighly linear fundamental up-converter in InP DHBT technology for W-band applicationseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorFBHeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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