Reversible shift in the superconducting transition for La1.85Sr0.15CuO4 and BaFe1.8Co0.2As2 using piezoelectric substrates

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dc.bibliographicCitation.journalTitleNew Journal of Physicseng
dc.bibliographicCitation.volume12
dc.contributor.authorTrommler, S.
dc.contributor.authorHühne, R.
dc.contributor.authorIida, K.
dc.contributor.authorPahlke, P.
dc.contributor.authorHaindl, S.
dc.contributor.authorSchultz, L.
dc.contributor.authorHolzapfel, B.
dc.date.accessioned2018-06-12T16:44:16Z
dc.date.available2019-06-28T12:40:02Z
dc.date.issued2010
dc.description.abstractThe use of piezoelectric substrates enables dynamic observation of the strain-dependent properties of functional materials. Based on studies with La1.85Sr0.15CuO4 (LSCO), we extended this approach to the iron arsenic superconductors represented by BaFe2− xCoxAs2 to investigate strain-driven changes in detail. We demonstrate that epitaxial thin films can be prepared on (001) Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates using pulsed laser deposition. The structural and electric properties of grown films were characterized in detail. A reversible shift of the superconducting transition of 0.4 K for LSCO and 0.2 K for BaFe1.8Co0.2As2 was observed on applying biaxial strains of 0.022 and 0.017%, respectively.
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1655
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4377
dc.language.isoengeng
dc.publisherMilton Park : Taylor & Francis
dc.relation.doihttps://doi.org/10.1088/1367-2630/12/10/103030
dc.rights.licenseCC BY-NC-SA 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/3.0/eng
dc.subject.ddc530
dc.subject.otherBiaxial strainseng
dc.subject.otherDynamic observationeng
dc.subject.otherEpitaxial thin filmseng
dc.subject.otherPiezoelectric substrateseng
dc.subject.otherStrain-dependenteng
dc.subject.otherSuperconducting transitionseng
dc.titleReversible shift in the superconducting transition for La1.85Sr0.15CuO4 and BaFe1.8Co0.2As2 using piezoelectric substrates
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIFWDeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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