Dry etching of monocrystalline silicon using a laser-induced reactive micro plasma

dc.bibliographicCitation.firstPage100169eng
dc.bibliographicCitation.journalTitleApplied Surface Science Advanceseng
dc.bibliographicCitation.volume6eng
dc.contributor.authorHeinke, Robert
dc.contributor.authorEhrhardt, Martin
dc.contributor.authorLorenz, Pierre
dc.contributor.authorZimmer, Klaus
dc.date.accessioned2022-02-24T07:46:16Z
dc.date.available2022-02-24T07:46:16Z
dc.date.issued2021
dc.description.abstractDry etching is a prevalent technique for pattern transfer and material removal in microelectronics, optics and photonics due to its high precision material removal with low surface and subsurface damage. These processes, including reactive ion etching (RIE) and plasma etching (PE), are performed at vacuum conditions and provide high selectivity and vertical side wall etched patterns but create high costs and efforts in maintenance due to the required machinery. In contrast to electrically generated plasmas, laser-induced micro plasmas are controllable sources of reactive species in gases at atmospheric pressure that can be used for dry etching of materials. In the present study, we have demonstrated the laser-induced plasma etching of monocrystalline silicon. A Ti:Sapphire laser has been used for igniting an optically pumped plasma in a CF4/O2 gas mixture near atmospheric pressure. The influence of process parameters, like substrate temperature, O2 concentration, plasma-surface distance, etching duration, pulse energy and crystal orientation on etching rate and surface morphology has been investigated. Typical etching rates of 2–12 µm x min−1 can be achieved by varying mentioned parameters with a decreasing etching rate during the process. Different morphologies can be observed due to the parameters set, smooth as well as rough surfaces or even inverted pyramids. The presented etching method provides an approach for precise machining of silicon surfaces with good surface qualities near atmospheric pressure and sufficiently high material removal rates for ultraprecise surface machining. © 2021 The Author(s)eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8078
dc.identifier.urihttps://doi.org/10.34657/7119
dc.language.isoengeng
dc.publisherAmsterdam : Elseviereng
dc.relation.doihttps://doi.org/10.1016/j.apsadv.2021.100169
dc.relation.essn2666-5239
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc540eng
dc.subject.ddc530eng
dc.subject.ddc660eng
dc.subject.otherCF4eng
dc.subject.otherLasereng
dc.subject.otherPlasma formationeng
dc.subject.otherReactive etchingeng
dc.subject.otherSieng
dc.subject.otherreactive ion etching (RIE)eng
dc.subject.otherplasma etching (PE)eng
dc.titleDry etching of monocrystalline silicon using a laser-induced reactive micro plasmaeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIOMeng
wgl.subjectChemieeng
wgl.typeZeitschriftenartikeleng
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