Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
dc.bibliographicCitation.firstPage | 1807613 | eng |
dc.bibliographicCitation.issue | 14 | eng |
dc.bibliographicCitation.volume | 29 | eng |
dc.contributor.author | Sammak, Amir | |
dc.contributor.author | Sabbagh, Diego | |
dc.contributor.author | Hendrickx, Nico W. | |
dc.contributor.author | Lodari, Mario | |
dc.contributor.author | Wuetz, Brian Paquelet | |
dc.contributor.author | Tosato, Alberto | |
dc.contributor.author | Yeoh, LaReine | |
dc.contributor.author | Bollani, Monica | |
dc.contributor.author | Virgilio, Michele | |
dc.contributor.author | Schubert, Markus Andreas | |
dc.contributor.author | Zaumseil, Peter | |
dc.contributor.author | Capellini, Giovanni | |
dc.contributor.author | Veldhorst, Menno | |
dc.contributor.author | Scappucci, Giordano | |
dc.date.accessioned | 2021-08-31T09:00:18Z | |
dc.date.available | 2021-08-31T09:00:18Z | |
dc.date.issued | 2019 | |
dc.description.abstract | Buried-channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 10 5 cm 2 V −1 s −1 ) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top-gate of a dopant-less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 10 11 cm −2 , light effective mass (0.09m e ), and high effective g-factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/6634 | |
dc.identifier.uri | https://doi.org/10.34657/5681 | |
dc.language.iso | eng | eng |
dc.publisher | Weinheim : Wiley-VCH | eng |
dc.relation.doi | https://doi.org/10.1002/adfm.201807613 | |
dc.relation.essn | 1099-0712 | |
dc.relation.essn | 1616-3028 | |
dc.relation.ispartofseries | Advanced Functional Materials 29 (2019), Nr. 14 | eng |
dc.relation.issn | 1616-301X | |
dc.relation.issn | 1057-9257 | |
dc.rights.license | CC BY-NC-ND 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0/ | eng |
dc.subject | germanium | eng |
dc.subject | mobility | eng |
dc.subject | quantum devices | eng |
dc.subject | quantum well | eng |
dc.subject.ddc | 620 | eng |
dc.subject.ddc | 540 | eng |
dc.subject.ddc | 530 | eng |
dc.title | Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology | eng |
dc.type | article | eng |
dc.type | Text | eng |
dcterms.bibliographicCitation.journalTitle | Advanced Functional Materials | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IHP | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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